Room-Temperature Direct Cu Semi-Additive Plating (SAP) Bonding for Chip-on-Wafer 3D Heterogenous Integration With μLED

This letter describes a direct Cu bonding technology to there-dimensionally integrate heterogeneous dielets based on a chip-on-wafer configuration. 100 -mu m cubed blue mu LEDs temporarily adhered on a photosensitive resin are interconnected by semi-additive plating (SAP) without thermal compression bonding. By using SAP bonding, a lot of dielets can be stacked on thin 3D-IC chiplets. The following three key technologies are applied to solve the yield issues of SAP bonding. After pick and-place assembly, additional coplanarity enhancement eliminates Cu bridges grown to a small gap between the mu LEDs and photosensitive resin. The mu LEDs arrays with sidewalls insulated by room-temperature ozone-ethylene radical (OER)-SiO2-CVD are successfully bonded on sapphire wafers and a thin 3D-IC with through-Si via (TSV). Further design optimization is required, but partial seed pre-etching works well to increase the yield. Fully integrated module implementation with the 3D-ICs will be the next stage, however, we discuss a superior prospect for yield enhancement toward nearly 100%.

Automated summary

This letter introduces a direct Cu bonding technology for three-dimensionally integrating heterogeneous dielets. By using SAP bonding, a large number of dielets can be stacked on thin 3D-IC chiplets. The letter also discusses key technologies to solve the yield issues of SAP bonding.