Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage

Article Engineering, Electrical & Electronic

Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions

Michiel Vandemaele et al.

Summary: This study presents measurements of multiple hot-carrier stress and high-temperature anneal cycles on the same nFETs in a commercial 40-nm bulk CMOS technology. It models the degradation anneal process assuming Si-H bond breakage during stress and bond passivation during anneal, with the bond dissociation and passivation energies following a bivariate Gaussian distribution. The research finds no correlation between bond dissociation and passivation energies, and notes that repeated HC stress and anneal cycles change the shape of the distribution of bond passivation energies from Gaussian to non-Gaussian.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Proceedings Paper Engineering, Electrical & Electronic

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Runsheng Wang et al.

Summary: This paper presents recent advances in the study of hot carrier degradation (HCD) using a trap-based approach, including microscopic speculation of interface trap generation using time-dependent DFT (TDDFT) simulations. Two types of oxide traps contributing to HCD have been identified through experiments. A unified compact model has been proposed to accurately predict hot carrier degradation and variation in bias, considering contributions of interface and oxide traps. The study also discusses the mixed mode reliability of HCD-BTI coupling under self-heating and off-state stress conditions.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

添加到收藏夹

Proceedings Paper Engineering, Multidisciplinary

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs

Hao Chang et al.

Summary: In this study, a comparative analysis of trap energy distribution in short channel p-FinFETs under HCD and NBTI was conducted. It was found that the generated traps were highly sensitive to stress voltage and stress time, but switching to long channel devices could reduce trap generation and overall degradation.

2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic