Fast-Response Amorphous In2Te3 Short-Wave Infrared (SWIR) Photodetector

Despite the wide applications of Short-Wave Infrared (SWIR) imaging, standardimagingmaterials require lattice matching and complex fabrication techniques which are relatively expensive. In this work, 50 nm thick amorphous indium telluride (In2Te3) films are RF sputtered on a silicon (Si/SiO2) substrate at 300 degrees C. The films are used to fabricate back-gated field-effect photodetectors (PDs). The In2Te3 detectors exhibit a broad wavelength response from 406 nm to 1600 nm and a photo responsivity of 0.44 AW(-1) under 1310 nm excitation at 5 V bias. Furthermore, an n-type behavior with an electron field-effectmobility of 1.15 cm(2)V(-1)s(-1) is observed. We also evaluated the frequency response of the PDs under 1310 nm modulated light, a 3dB cut-off frequency of similar to 0.97 MHz is measured. Further, the device exhibits specific detectivity of 1.32 x 10(9) Jones and very good stability at ambient conditions.

Automated summary

In this study, 50 nm thick amorphous indium telluride films were fabricated using RF sputtering technique on a silicon substrate. These films were then used to create back-gated field-effect photodetectors. The detectors exhibited a broad wavelength response, high photo responsivity, and good frequency response. They also showed excellent stability under ambient conditions.