3659-V NO2 p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates

In this letter, we report an NO2 p-type doped and Al2O3 bilayer passivated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) fabricated on a misoriented heteroepitaxial diamond substrate. The MOSFET demonstrated a high breakdown voltage of 3659 V, the highest reported among diamond MOSFETs. MOSFETs with a gate length of 2.5 mu m exhibited a maximum drain current density of 372 mA/mm and maximum available power density (Baliga's figure-of-merit) of 173 MW/cm(2). In addition, the maximum mobility was estimated to be 187 cm(2)/V center dot s, and the subthreshold swing was 189 mV/dec. This study explores the prospects of misoriented heteroepitaxial diamonds in power electronic device applications.

Automated summary

In this study, a NO2 p-type doped and Al2O3 bilayer passivated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on a misoriented heteroepitaxial diamond substrate. The MOSFET exhibited a high breakdown voltage of 3659 V, the highest reported among diamond MOSFETs. MOSFETs with a gate length of 2.5 μm showed a maximum drain current density of 372 mA/mm and a maximum available power density (Baliga's figure-of-merit) of 173 MW/cm(2). Moreover, the maximum mobility was estimated to be 187 cm(2)/V center dot s, and the subthreshold swing was 189 mV/dec. This study explores the prospects of misoriented heteroepitaxial diamonds in power electronic device applications.