4.6 Article

Temperature Regulated Artificial Neuron Based on Memristor

期刊

IEEE ELECTRON DEVICE LETTERS
卷 43, 期 11, 页码 2001-2004

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3206796

关键词

Neurons; Firing; Threshold voltage; Temperature distribution; Electrodes; Performance evaluation; Silicon; Artificial neuron; temperature modulation; firing probability

资金

  1. National Natural Science Foundation of China [U21A20497]
  2. Natural Science Foundation for Distinguished Young Scholars of Fujian Province [2020J06012]
  3. Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China [2021ZZ129]

向作者/读者索取更多资源

This study introduces an artificial neuron device based on Ag/TaOx/Si, which demonstrates stable performance and successfully simulates neuron models. Moreover, increasing temperature can enhance neuron performance and promote neuron transformation.
Recently, artificial neurons have attracted much attention due to their excellent energy efficiency and scalability. However, there are still few reports on the regulation of the performance of artificial neuron based on single device. In the letter, we present an artificial neuron device based on Ag/TaOx/Si that not only has excellent turn-on and turn-off performance, but also exhibits sustained stability under multiple cycle tests. Moreover, the Integrate -and-Fire (IF) neuron model is successfully simulated at room temperature. More importantly, we find that an increase of temperature could reduce the threshold voltage and reset voltage of neurons, improve the probability of neuronal firing, and promote the transformation of neurons from nonvolatile to volatile. This work provides an effective method for regulating artificial neurons and has important implications for studying information transfer in biology and adapting complex computations in a memory computing framework.

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