Performance of Transparent Indium-Gallium-Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

Transparent indium-gallium-zinc oxide thin film transistor (IGZO-TFT) prepared by all plasma enhanced atomic layer deposition (PEALD) has been firstly investigated. As the chemical composition has a considerable impact on the performance of IGZO TFTs, the properties of IGZO film and IGZO-TFT based on different In2O3 cycle ratios are investigated. The IGZO film prepared by PEALD shows amorphous state with excellent conformity and uniformity. Moreover, the a-IGZO films with different In2O3 cycle ratios are applied to TFT fabrication. When the a-IGZO thin film with 35% In2O3 cycle ratios, the transistor presents satisfactory electrical performance with a threshold voltage (V-th) of 1.7 V, a saturation mobility (mu(sat)) of 8.8 cm(2)/Vs, a subthreshold swing (SS) of 0.2 V/decade and an I-ON/I-OFF of 2.2 x 10(8). This work provides a new way to achieve transparent TFT which better for practical commercial applications.

Automated summary

This study investigates the transparent indium-gallium-zinc oxide thin film transistor (IGZO-TFT) prepared by all plasma enhanced atomic layer deposition (PEALD). The properties of the IGZO film and IGZO-TFT based on different In2O3 cycle ratios are examined due to the considerable impact of chemical composition on the performance of IGZO TFTs. The IGZO film prepared by PEALD exhibits amorphous state with excellent conformity and uniformity. By applying a-IGZO films with different In2O3 cycle ratios, a satisfactory electrical performance of the transistor is achieved, with a threshold voltage (V-th) of 1.7 V, a saturation mobility (mu(sat)) of 8.8 cm(2)/Vs, a subthreshold swing (SS) of 0.2 V/decade, and an I-ON/I-OFF of 2.2 x 10(8). This work provides a new approach for achieving transparent TFTs that are more suitable for practical commercial applications.