702.3 A.cm-2/10.4 mΩ.cm2 Vertical β-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

High-performance beta-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to form current blocking layer. Electrons in the blocking layer can accumulate in the area near the U-shaped groove and form a conductive channel to promote current generation at a positive gate bias. The UMOSFET with an applicable threshold voltage of 4.2 V was achieved by modulating the concentration of implanted nitrogen ions. A high current density of 702.3 A/cm(2), a low on-resistance of 10.4 m Omega.cm(2), and a decent breakdown voltage of 455 V (at V-G =0 V) were obtained for UMOSFET with N ions concentration of 5 x 10(18) cm(-3). The UMOSFET in this work offers exceptional advantages in fabrication of high-performance E-mode vertical beta-Ga2O3 MOSFETs, facilitating the development of beta-Ga2O3 power electronics devices.

Automated summary

In this work, a high-performance beta-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) was demonstrated. Nitrogen ions were used to create a current blocking layer, which allowed electrons to accumulate near the U-shaped groove and form a conductive channel, promoting current generation. By modulating the concentration of implanted nitrogen ions, a UMOSFET with an applicable threshold voltage of 4.2 V was achieved. When the N ions concentration was 5 x 10^18 cm^-3, a high current density of 702.3 A/cm^2, a low on-resistance of 10.4 m Omega.cm^2, and a decent breakdown voltage of 455 V (at V_G =0 V) were obtained. The UMOSFET in this study offers great advantages in the fabrication of high-performance E-mode vertical beta-Ga2O3 MOSFETs and facilitates the development of beta-Ga2O3 power electronics devices.