期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 11, 页码 1905-1908出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3210005
关键词
Indium oxide; amorphous oxide semiconductor; gate-all-around nanoribbon transistor; BEOL compatible; atomic layer deposition
资金
- Semiconductor Research Corporation (SRC) nCore Innovative Materials and Processes for Accelerated Compute Technologies (IMPACT) Center
- Defense Advanced Research Projects Agency (DARPA)/SRC Joint University Microelectronics Program (JUMP) Applications and Systems Driven Center for EnergyEfficient Integrated NanoTechnologies (ASCENT) Center
- Air Force Office of Scientific Research (AFOSR)
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Compute Canada
In this study, atomic layer-deposited single-channel indium oxide gate-all-around nanoribbon field-effect transistors were demonstrated in a back-end-of-line compatible process, achieving high on-state current and on/off ratio. Short-pulse measurements were used to mitigate self-heating effects, highlighting the potential of In2O3 as an oxide semiconductor channel for monolithic 3D integration.
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon field-effect transistors (FETs) in a back-end-of-line (BEOL) compatible process. A maximum on-state current (I-ON) of 19.3 mA/mu m (near 20 mA/mu m) and an on/off ratio of 10(6) are achieved in an In2O3 GAA nanoribbon FET with a channel thickness (T-IO) of 3.1 nm, channel length (L-ch) of 40 nm, channel width (W-ch) of 30 nm and dielectric HfO2 of 5 nm. Short-pulse measurements are applied to mitigate the self-heating effect induced by the ultra-high drain current flowing in the ultra-thin channel layer. The record high drain current obtained from an In2O3 FET is about one order of magnitude higher than any conventional single-channel semiconductor FETs. This extraordinary drain current and its related on-state performance demonstrate that ALD In2O3 is a promising oxide semiconductor channel with great opportunities in BEOL compatible monolithic 3D integration.
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