期刊
IEEE ELECTRON DEVICE LETTERS
卷 44, 期 2, 页码 265-268出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3232805
关键词
Field effect transistors; Behavioral sciences; Ink jet printing; Transmission line measurements; Transient analysis; Substrates; Stress; Multi-valued logic; inverter circuit; inkjet printing; thin-film transistors; logic-in-memory
This work proposes a pre-state-dependent ternary and binary logic inverter using a single-walled carbon nanotube (SWCNT)/indium oxide (InO) heterojunction field-effect transistor (H-FET) formed by inkjet printing. The proposed device has a logic-in-memory characteristic that operates in either ternary or binary mode depending on the previous output voltage state. The device exhibits previous state dependent ternary/binary operations even after 4 days of exposure under ambient conditions and with 90 s of constant supply of bias stress.
This work proposes a pre-state-dependent ternary and binary logic inverter using a single-walled carbon nanotube (SWCNT)/indium oxide (InO) heterojunction field-effect transistor (H-FET) which is reliably formed by an inkjet printing method. The proposed device exhibits a logic-in-memory characteristic that operates in either ternary or binary mode depending on the previous output voltage state. Such previous state dependent ternary/binary operations are observed even after 4 days of exposure under ambient conditions and with 90 s of constant supply of bias stress.
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