4.6 Article

SnS2/PEDOT:PSS Heterostructure-Based High Performance UV-Visible Photodetectors

期刊

IEEE ELECTRON DEVICE LETTERS
卷 43, 期 11, 页码 1913-1916

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3207421

关键词

Tin disulfide; hybrid heterojunction; inorganic-organic

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This letter proposes a SnS2/PEDOT:PSS based heterojunction UV-visible light photodetector which shows high responsivity, external quantum efficiency, detectivity, and sensitivity. The device also exhibits fast response time and fall time.
This letter proposes a SnS2/PEDOT:PSS based heterojunction UV-visible light photodetector fabricated on ITO coated flexible PET substrate using the low-cost sol-gel spin coating method. The device shows respective responsivity, external quantum efficiency (EQE), detectivity and sensitivity of 182.89 A/W, 7.55 x 10(4) %, 1.44 x 10(12) Jones, and 4.40 at 300 nm (UV); 837.31 A/W, 2.30 x 10(5) %, 5.24 x 10(12) Jones and 20.15 at 450 nm (visible); and 706.94 A/W, 1.25 x 10(5) %, 4.42 x 10(12) Jones, and 17.01 at 700nm (visible). The transient measurement gives a risetime (t(r)) of 27 mu s and a fall time (t(f)) of 36 mu s at 450 nm and -1 V bias. The high EQE is attributed to the photomultiplication effect resulted from the interfacial trap induced charge injection in organic photodetectors.

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