期刊
IEEE ELECTRON DEVICE LETTERS
卷 43, 期 12, 页码 2105-2108出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3216620
关键词
Aluminum nitride; III-V semiconductor materials; Logic gates; Temperature measurement; Dielectric measurement; Hysteresis; Dielectrics; MOCVD; AlN; Epitaxy; IGZO TFTs
资金
- Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within Ministry of Education (MOE) in Taiwan
- Ministry of Science and Technology, Taiwan [MOST 111-2634-F-A49-008, 110-2622-8-009-018-SB]
- National Chung-Shan Institute of Science and Technology, Taiwan [NCSIST-403-V309(110)]
This study experimentally demonstrates the HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching and shows the potential feasibility of the hybrid gate stack in high voltage memory device applications.
In this letter, HfO2/Al2O3/AlN hybrid stack capacitor with ferroelectric switching is experimentally demonstrated for the first time. The metal-insulator-semiconductor (MIS) capacitors and InGaZnO4 (IGZO) channel thin-film transistors (TFTs) with the HfO2/Al2O3/AlN hybrid gate stack are demonstrated in this letter. With the hybrid gate stack, the TFT exhibits the clear counter-clockwisememory windows (MWs) of 6.5 V, 6.2 V and 28.7 V respectively measured at 368 K, RT, and 80 K under the sweep voltage of +/- 40 V. Moreover, the retention over 10(4) s and the endurance over 10(4) cycles are demonstrated under the program(P)/erase (E) pulsed height of +/- 45 V. The results exhibit the applicable possibility of the HfO2/Al2O3/AlN stack for the high voltage memory device applications.
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