Tuning the Quantum Properties of ZnO Devices by Modulating Bulk Length and Doping

The quantum transport properties of ZnO devices with five different bulk configurations are investigated with numerical methods. The calculation results reveal that the transport property at a higher energy range can be tuned by changing the length of central scattering. By substituting some Zn atoms with Cu atoms, it is found that the doped Cu atoms have an obvious effect on the quantum properties at the entire energy range investigated, and could result in different transmission. The properties of ZnO devices are also influenced by the doping positions of Cu atoms. The tuning mechanism relies on the shifting of carrier distributions in the scattering center of the device.

Automated summary

In this study, the quantum transport properties of ZnO devices with different bulk configurations were investigated using numerical methods. The results showed that the transport property at a higher energy range could be tuned by changing the length of central scattering. Substituting some Zn atoms with Cu atoms also had a significant effect on the quantum properties, resulting in different transmission. The doping positions of Cu atoms also influenced the properties of the ZnO devices, as the tuning mechanism relied on the shifting of carrier distributions in the scattering center.