Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact's etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level E-T ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 (E-T = 0.47-0.48 eV; sigma approximate to 10(-15) cm(2)) and D7 (E-T = 0.57 eV; sigma = 4.45 x 10(-12) cm(2)). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as C-N-C-Ga. Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: N-Ga.

Automated summary

Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Electron traps in AlGaN/GaN-on-Si power diodes were investigated using DLTFS, and seven different traps corresponding to point defects were identified. Two new traps related to etching were reported, while others were proposed to be related to carbon and nitrogen vacancies or carbon. Crystal surface recombination, native defects, and nitrogen antisite were also likely origins of the identified traps.