期刊
CRYSTENGCOMM
卷 25, 期 1, 页码 95-107出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2ce01278b
关键词
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资金
- National Natural Science Foundation of China [51872033, 51732007]
- Natural Science Foundation of Liaoning Province [2019-ZD-0572]
- Natural Science Foundation of Hebei Province [E2021501017]
- Young Talents Program of Hebei Province [BJ2020202]
- Fund of the State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals [SKL-SPM-202016, SKL-SPM-202019]
High-performance dielectric materials are crucial for electronic devices. This study prepared RE-doped SrTiO3 (RE = La, Nd, Yb) single crystals with excellent dielectric properties using the Verneuil method. The dielectric properties were found to be closely related to oxygen vacancies, with Yb-STO showing the best properties due to the partial replacement of Ti4+ by Yb3+. N-2 atmosphere treatment further enhanced the dielectric properties by promoting the production of oxygen vacancies and Ti3+ and increasing the formation of defect dipoles.
High-performance dielectric materials are essential components of electronic devices. In this work, RE-doped SrTiO3 (RE = La, Nd, Yb) single crystals with excellent dielectric properties were prepared by the Verneuil method. For La-STO and Nd-STO, the RE ions are substituted for Sr2+ only, and the excellent dielectric properties are mainly caused by defect dipoles associated with oxygen vacancies including and defect dipole clusters. For Yb-STO, Yb3+ partially replaces Ti4+, forming an additional defect dipole , resulting in the best dielectric properties (epsilon' = 3.6 x 10(4), tan delta = 0.0036 under 1 kHz). In addition, N-2 atmosphere treatment promotes the production of oxygen vacancies and Ti3+ and the formation of more defect dipoles, thus further optimizing the dielectric properties of Yb-STO (epsilon' = 4.9 x 10(4), tan delta = 0.004 under 1 kHz). This work suggests that the dielectric properties of RE-doped SrTiO3 materials are closely related to oxygen vacancies, and the simultaneous substitution of Sr2+ and Ti4+ should enable obtaining dielectric properties superior to those of the substitution of Sr2+ only. The present work provides a clearer understanding of the origin of SrTiO3 dielectric properties, which is of great significance to the development of SrTiO3-based dielectric materials.
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