期刊
CHINESE PHYSICS LETTERS
卷 39, 期 12, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0256-307X/39/12/128501
关键词
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资金
- National Key Research and Development Program of China [2022YFA1405100, 2022YFE0134600]
- Beijing Natural Science Foundation Key Program [Z190007]
- National Natural Science Foundation of China [61774144, 62005265, 52272152]
- Key Research Program of Frontier Sciences [QYZDY-SSW-JSC020]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB44000000, XDB28000000]
A large tunnel magnetoresistance (TMR) has been achieved at room temperature in magnetic tunnel junctions (MTJs) based on two-dimensional van der Waals (vdW) heterostructures, which opens up new possibilities for low power consumption and miniaturization of spintronic devices.
A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices. However, their operation at room temperature remains a challenge. Here, we report a large tunnel magnetoresistance (TMR) of up to 85% at room temperature (T = 300 K) in vdW MTJs based on a thin (< 10 nm) semiconductor spacer WSe2 layer embedded between two Fe3GaTe2 electrodes with intrinsic above-room-temperature ferromagnetism. The TMR in the MTJ increases with decreasing temperature up to 164% at T = 10 K. The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.
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