Electronic structures and optical properties of uniform ordered hexagonal Ge0.5Si0.5 alloys from first principles

Article Physics, Applied

Ternary SiGeSn alloy nanocrystals via nonthermal plasma synthesis

Gregory F. Pach et al.

Summary: This study reports the successful synthesis of ternary SiGeSn nanocrystals via nonthermal plasma synthesis. Structural, chemical, and vibrational analyses reveal the presence of Si, Ge, and Sn elements on both the surface and within the core of the nanocrystals. The incorporation of Sn into the core is achieved by injecting SiH4 and GeH4 precursor gases in the after-glow region of the plasma. The study also demonstrates the compositional and Sn content tunability of the SiGeSn nanocrystals, showing their potential for various applications.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2022)

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Article Materials Science, Multidisciplinary

Giant Optical Oscillator Strengths in Perturbed Hexagonal Germanium

Abderrezak Belabbes et al.

Summary: By conducting ab initio calculations, it has been demonstrated that perturbed hexagonal germanium is an excellent material for active optoelectronic devices in the infrared region. Perturbing the system through atomic substitution and applying strain can greatly enhance the oscillator strength and energy transition of the material, making it suitable for light emitting devices.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2022)

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Article Physics, Applied

Electronic properties and tunability of the hexagonal SiGe alloys

Zhen Wang et al.

Summary: By varying the Si content of 2H-SiGe alloys, the bandgap can transition from indirect to direct. Furthermore, strain engineering can also change the bandgap of Si-rich 2H-SiGe alloys from indirect to direct.

APPLIED PHYSICS LETTERS (2021)

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Review Chemistry, Multidisciplinary

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Yuanhao Miao et al.

Summary: GeSn alloys have attracted extensive attention for their excellent properties and wide-ranging applications, with CVD being the dominant growth method in the industry. This review focuses on recent advancements in GeSn CVD growth, detectors, lasers, and transistors, which will contribute to the development of high-performance electronic and optoelectronic devices.

NANOMATERIALS (2021)

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Article Physics, Applied

Toward accurate electronic, optical, and vibrational properties of hexagonal Si, Ge, and Si1-xGex alloys from first-principle simulations

Nanyun Bao et al.

Summary: A new hexagonal phase of Si1-xGex alloys has been successfully synthesized, and its structural, electronic, optical, and vibrational properties have been investigated through calculations and models. The research suggests that hexagonal Si1-xGex alloys have potential applications as nonlinear crystals and can be tuned continuously in the infrared region.

JOURNAL OF APPLIED PHYSICS (2021)

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Article Nanoscience & Nanotechnology

Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain

Simon Mellaerts et al.

Summary: In this study, Germanium (Ge) under an isotropic 3D strain is investigated based on first-principles methods. The findings demonstrate that a direct band gap in Ge could be achieved with only 0.70% triaxial tensile strain (negative pressure), leading to increased refractive index and carrier mobility. The results highlight the enormous potential of exploring 3D deformation space for semiconductors and other materials to optimize their properties.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Engineering, Electrical & Electronic

Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

Mantu K. Hudait et al.

Summary: Strained and band gap engineered epitaxial germanium quantum-well laser structures were investigated on GaAs substrates for the first time. The study demonstrated the benefits of increased strain on the performance of the laser medium and highlighted the superior material quality achieved through controlled dislocations and minimal relaxation at the heterointerface.

ACS APPLIED ELECTRONIC MATERIALS (2021)

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Article Materials Science, Multidisciplinary

Carrier-stabilized hexagonal Ge

Xuefen Cai et al.

Summary: By using first-principles calculations, it was found that introducing carriers can stabilize the hexagonal lonsdaleite phase of Germanium. Unlike compounds like ZnSe, the hexagonal phase of Germanium can be stabilized by either electrons or holes, due to the different band alignment properties between its cubic and hexagonal phases.

PHYSICAL REVIEW B (2021)

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Article Multidisciplinary Sciences