4.7 Article

Effect of doping with different sulphur group elements on the performance of silver ion-conducting glass

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CERAMICS INTERNATIONAL
卷 49, 期 7, 页码 10822-10828

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ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2022.11.274

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Conductive glass; Melt quenching technology; Thermal property; Ionic conductivity; Silver ion transport

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AgI-based Ge-Ga-S, Ge-Ga-Se, and Ge-Ga-Te ion-conducting glasses with different sulphur group elements were prepared. The thermodynamic stability and electrical properties were examined and compared. Among the glasses, Ge-Ga-S-AgI exhibited the best thermodynamic stability and glass-forming ability, highest ionic conductivity (1.33 x 10(-7) S/cm) at room temperature, and lowest conductivity activation energy (0.41 eV). The study also revealed the role of structural units in facilitating the transport of Ag+ ions in different series of glasses.
Ion-conducting glasses of AgI-based Ge-Ga-S, Ge-Ga-Se and Ge-Ga-Te with different sulphur group elements were prepared by melt quenching technique. The electrical properties and thermodynamic stability were investigated and compared. Glass transition temperatures and crystallisation temperatures of the samples were measured using differential scanning calorimetry. Results showed that Ge-Ga-S-AgI had the best thermodynamic stability and glass-forming ability, highest ionic conductivity (1.33 x 10(-7) S/cm) at room temperature and lowest conductivity activation energy of 0.41 eV. Raman spectroscopy analysis showed that the [GeInS4-n] (n = 1,2,3) structural units in the S series glasses provided a good environment for the effective transport of Ag+ and formed an active ion transport channel. By contrast, the structural units in the Se and Te series contributed less to the transport of Ag+. This work systematically explored the effects of three elements in the sulphur main group on the performance of Ag+ conductive glasses. This study provides a reference for the rational formulation of sulphur-based Ag+ conductive glass components with enhanced comprehensive properties.

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