4.7 Article

Production of p-CuO/n-ZnO:Co nanocomposite heterostructure thin films: An optoelectronic study

期刊

CERAMICS INTERNATIONAL
卷 49, 期 10, 页码 16458-16466

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ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2023.02.007

关键词

p-n heterostructure films; CuO; ZnO; Cobalt doping; Optical properties

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This study attempts to synthesize nanostructured p-type CuO and n-type ZnO nanocomposite films using a solution-based method. Bare and Cobalt (Co)-doped CuO-ZnO nanocomposite films were produced on glass slides using the SILAR method, and the influence of Co-doping concentration on the physical characteristics of the films was investigated. XRD spectrums confirmed the phase and structural purity of the synthesized CuO-ZnO nanocomposite samples. The surface topography, optical and electrical properties of the films were also examined. The 2.0% Co-doped CuO-ZnO nanocomposite film showed a higher optical transmission (-31%) near 1000 nm wavelength compared to the bare film (-38%). The sheet resistance of the 2.0% Co:CuO-ZnO nanocomposite sample was almost 13 times lower than that of the bare sample at 400 K temperature. This study provides a novel strategy for the production and performance optimization of CuO-ZnO nanocomposite heterostructures in optoelectronics applications.
The p-n junction is the principal mode of optoelectronic semiconductor material. At present, we submit a solution-based attempt at the synthesis of nanostructured p-type CuO and n-type ZnO nanocomposite (NC) heterostructure films. Bare and Cobalt (Co)-doped CuO-ZnO NC films have been produced on glass slides using the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The influence of Co-doping concentration on the physical characteristics of CuO-ZnO NC heterostructure films was investigated. XRD spectrums indicated the phase and structural purity of solution-based synthesized CuO-ZnO NC samples. The surface topographical, as well as optical and electrical properties of heterostructure films were, also investigated. While the bare CuO-ZnO NC film has a-38% transmission near 1000 nm wavelength region, the 2.0% Co-doped CuO-ZnO NC film has-31% of optical transmission. The sheet resistance value of the grown 2.0% Co:CuO-ZnO NC sample is almost 13 times lower than that of the bare CuO-ZnO NC sample at 400 K temperature. As a consequence, our attempt ensures a novel strategy for the production and performance optimization of CuO-ZnO NC hetero-structures in the implementation of optoelectronics.

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