4.8 Article

Thermal transport in turbostratic multilayer graphene

期刊

CARBON
卷 201, 期 -, 页码 120-128

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2022.08.089

关键词

Turbostratic graphene; Rotational stacking fault; Twisted graphene; Raman optothermal technique; thermal transport; Thermal conductivity

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The presence of twist angles significantly affects the physical properties of two-dimensional materials. This study investigates the influence of turbostratic single-layer graphene content on the in-plane thermal conductivity of a defect-free multilayer graphene system. Results show that the thermal conductivity of AB-stacked graphene decreases exponentially with an increasing fraction of turbostratic single-layer graphene content.
The presence of twist angles between layers of two-dimensional materials has a profound impact on their physical properties. Turbostratic multilayer graphene is a system containing a distribution of rotational stacking faults, and these interfaces also have variable twist angles. In this work, we examine the influence of turbostratic single-layer graphene content on the in-plane thermal conductivity of a defect free multilayer graphene system with low defect density. Detailed Raman mode analysis is used to quantify the content of turbostratic single-layer graphene in the system while complementing insight is obtained from selected area electron diffraction studies. Thermal transport in these systems is investigated with Raman optothermal technique supported with finite element analysis simulations. Thermal conductivity of AB-stacked graphene diminishes by a factor of 2.59 for 1% of turbostratic single-layer graphene content, while the decrease at 19% turbostratic content is by an order in magnitude. Thermal conductivity broadly obeys the relation, ⠔ & SIM; exp(-F), where F is the fraction of turbostratic single-layer graphene content in the system.

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