The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance

The low ternary yield and expensive organic active materials hinder the potential industrialization of organic multi-level resistive memories. Here, facile melamine (M)-cyanuric acid (C) hydrogen-bonded organic frame-work (M -C HOF) was firstly fabricated as a new type of ternary memorizer. In the M -C HOF, the robust graphite-like planar 2D sheet along ab-plane containing a rosette motif is constructed from nine hydrogen bonds among M and C, and the 2D sheets are stacked into a 3D network through strong pi-pi stacking interactions. The FTO/M-C/Ag device exhibits a typical ternary memory performance with considerable OFF/ON1/ON2 current ratio of 1:103.1:104.6, relatively low set voltages (1.14 and 1.70 V), good reliability, and high ternary device yield of 74 %. The ternary resistive switching behavior could be ascribed to the filled traps in 2D layer (for ON1 state) and the carriers flowing in 3D network (for ON2 state), which have been verified by quenched fluorescence of isolated M and C, increased (201) lattice plane distance upon external voltages. Besides, this ternary memorizer has superior thermal stability (300 degrees C) and irradiative tolerance. This attempt of HOF-based ternary memorizer presents a new choice for efficient and facial multi-level resistive material.

Automated summary

A new type of ternary memorizer, based on a facile melamine-cyanuric acid hydrogen-bonded organic frame-work, has been successfully fabricated. The ternary resistive switching behavior can be attributed to the filled traps in the 2D layer and the carriers flowing in the 3D network. The memorizer exhibits good memory performance, high yield, and superior thermal stability and irradiative tolerance.