相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Band bending at heterovalent interfaces: Hard X-ray photoelectron spectroscopy of GaP/Si(001) heterostructures
O. Romanyuk et al.
APPLIED SURFACE SCIENCE (2021)
Epitaxial GaInP/GaAs/Si Triple-Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic AlxGa1-xAsyP1-y Step-Graded Buffer Structures
Markus Feifel et al.
SOLAR RRL (2021)
Molecular beam epitaxy of CuMnAs
Filip Krizek et al.
PHYSICAL REVIEW MATERIALS (2020)
GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering
O. Romanyuk et al.
APPLIED SURFACE SCIENCE (2020)
Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
G. Mette et al.
APPLIED PHYSICS LETTERS (2020)
Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces
Oleksandr Romanyuk et al.
SURFACE AND INTERFACE ANALYSIS (2020)
The new dedicated HAXPES beamline P22 at PETRAIII
C. Schlueter et al.
13TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (SRI2018) (2019)
GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation
Agnieszka Paszuk et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2018)
Observing the evolution of regular nanostructured indium phosphide after gas cluster ion beam etching
Anders J. Barlow et al.
APPLIED SURFACE SCIENCE (2018)
Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience
Agnieszka Paszuk et al.
APPLIED SURFACE SCIENCE (2018)
Metalorganic vapor phase epitaxy of III-V-on-silicon: Experiment and theory
Oliver Supplie et al.
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS (2018)
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient
Agnieszka Paszuk et al.
JOURNAL OF CRYSTAL GROWTH (2017)
On the benchmarking of multi-junction photoelectrochemical fuel generating devices
Matthias M. May et al.
SUSTAINABLE ENERGY & FUELS (2017)
Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100)
William E. McMahon et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces
O. Romanyuk et al.
PHYSICAL REVIEW B (2016)
Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor Residuals
Oliver Supplie et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth
A. Paszuk et al.
APPLIED PHYSICS LETTERS (2015)
Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH3 surface preparation
Emily L. Warren et al.
APPLIED PHYSICS LETTERS (2015)
Molecular Depth Profiling with Argon Gas Cluster Ion Beams
Kan Shen et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2015)
Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface
Oliver Supplie et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2015)
In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)
Oliver Supplie et al.
APL MATERIALS (2015)
Application of hard X-ray photoelectron spectroscopy to electronic structure measurements for various functional materials
S. Ueda
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA (2013)
Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory
O. Romanyuk et al.
PHYSICAL REVIEW B (2013)
Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs
P. Wadley et al.
NATURE COMMUNICATIONS (2013)
In situ reflection anisotropy spectroscopy analysis of heteroepitaxial GaP films grown on Si(100)
Henning Doescher et al.
JOURNAL OF APPLIED PHYSICS (2010)
Single P and As dopants in the Si(001) surface
M. W. Radny et al.
JOURNAL OF CHEMICAL PHYSICS (2007)
Heterovalent interlayers and interface states:: An ab initio study of GaAs/Si/GaAs(110) and (100) heterostructures -: art. no. 155324
M Di Ventra et al.
PHYSICAL REVIEW B (2005)
Low-damage sputtering of GaAs and GaP using size-selected Ar cluster ion beams
M Nagano et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2005)
P-rich GaP(001) (2x1)/(2x2) surface: A hydrogen-adsorbate structure determined from first-principles calculations
PH Hahn et al.
PHYSICAL REVIEW B (2003)
Interface-states at ZnSe/Ge heterojunctions: the role of atomic interdiffusion and disorder
M Peressi et al.
APPLIED PHYSICS LETTERS (2002)
RDS, LEED and STM of the P-rich and Ga-rich surfaces of GaP(100)
L Töben et al.
SURFACE SCIENCE (2001)