Tuned band offset in homogenous TMDs via asymmetric ferroelectric semiconductor gates toward simultaneous rectification and memory

Article Chemistry, Multidisciplinary

Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications

Prashant Singh et al.

Summary: 2D van der Waal heterostructures (vdWHs) show potential in developing FeFETs with long data retention and endurance characteristics.

ACS NANO (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse

Yurong Jiang et al.

Summary: In this study, a reconfigurable two-dimensional MoS2 transistor with an asymmetric ferroelectric gate is designed, demonstrating high memory and logic capability. The device exhibits excellent nonvolatile characteristics, robust electric and optic cycling, and synaptic behavior in response to different light pulses, showcasing its potential for Fe-FETs in logic processing and nonvolatile memory applications.

ACS NANO (2022)

添加到收藏夹

Article Physics, Applied

Electrochemical-tunable and mesostructure-dependent abrupt-to-progressive conversion in fibroin-based transient memristor

Xinhui Zhao et al.

Summary: The unique degradability and excellent biocompatibility of silk fibroin make it an attractive material for flexible transient memristors. Through adjusting the mesoscopic structure, the transition from abrupt to progressive switching behavior in fibroin-based memristors is achieved. The microscopic origins of the abrupt-to-progressive conversion are revealed, providing general guidance for the design of high-performance memory devices and artificial synapses.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Article Multidisciplinary Sciences

Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection

Yunfeng Chen et al.

Summary: High quantum efficiency was achieved in 2D black phosphorus (BP)/Bi2O2Se van der Waals (vdW) photodetectors by utilizing momentum-matching and band-alignment heterostructures. Optimization of photocarrier generation, suppression of recombination, and improvement of photocarrier collection contributed to the significantly improved quantum efficiency.

SCIENCE ADVANCES (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing

Man Hu et al.

Summary: Synaptic transistors with non-linear conductance were successfully realized using a two-dimensional van der Waals heterostructure based float gate memory device. The device exhibited highly non-linear conductance and lateral inhibition function similar to horizontal cells, enabling adjustable edge enhancement for early visual processing.

MATERIALS HORIZONS (2022)

添加到收藏夹

Review Chemistry, Multidisciplinary

Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

Junye Li et al.

Summary: Nanostructured In(2)Se(3) compounds are widely used in electronics, optoelectronics, and thermoelectrics, with recent interest focusing on the ferroelectricity discovered in low-dimensional In2Se3. The properties of In2Se3 are highly correlated with its crystal structure, leading to efforts in controlling phases for pure-phase In2Se3 nanostructures. The application of nanostructured In2Se3 in various functional devices, such as nonvolatile memories and photodetectors, has shown promising results but also poses challenges for further research.

ACS NANO (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Shuiyuan Wang et al.

Summary: This study presents a ferroelectric semiconductor channel device with non-volatile memory and neural computation functions, demonstrating remarkable performance in terms of ultra-fast write speed, endurance, low energy consumption, and high-precision recognition classification simulation.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Tailoring of a visible-light-absorbing biaxial ferroelectric towards broadband self-driven photodetection

Shiguo Han et al.

Summary: This study presents a lead-iodide hybrid biaxial ferroelectric with large spontaneous polarization and a narrow direct bandgap, exhibiting exceptional in-plane photovoltaic effects. The symmetry breaking of 4/mmmFmm2 species results in its biaxial attributes, providing four equivalent polar directions for photovoltaic applications in the crystallographic bc-plane. The coupling between ferroelectricity and photovoltaic effects in this material holds great potential for self-driven photodetection and future optoelectronic device applications.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Review Optics

Photonics for artificial intelligence and neuromorphic computing

Bhavin J. Shastri et al.

Summary: Research in photonic computing is thriving due to the proliferation of optoelectronic components in photonic integration platforms. Photonic integrated circuits have enabled ultrafast artificial neural networks, with algorithms running on such hardware having the potential to address the growing demand for machine learning and artificial intelligence. Neuromorphic photonics offers sub-nanosecond latencies, providing a complementary opportunity to extend the domain of artificial intelligence.

NATURE PHOTONICS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Xiaowei Wang et al.

Summary: The study demonstrates a long-retention ferroelectric transistor memory cell built from van der Waals single crystals, showing high endurance, rapid operation speed, and promising directions for improving ferroelectric memory performance and reliability in the future.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Ferroelectric-tuned van der Waals heterojunction with band alignment evolution

Yan Chen et al.

Summary: Band alignment transition of GeSe/MoS2 heterojunction is demonstrated in a ferroelectric-tuned van der Waals heterojunction device with high performance, showing a high-performance polarization-sensitive photodetector and enhanced dichroism ratios in a broad spectrum from visible to near-infrared.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions

Wenhao Huang et al.

ADVANCED MATERIALS (2020)

添加到收藏夹

Article Physics, Applied

Nonvolatile charge memory with optical controllability in two-terminal pristine α-In2Se3 nanosheets

Qinliang Li et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Vertical-Tunneling Field-Effect Transistor Based on WSe2-MoS2 Heterostructure with Ion Gel Dielectric

Hyun Bae Jeon et al.

ADVANCED ELECTRONIC MATERIALS (2020)

添加到收藏夹

Review Physics, Applied

Resistance switching in two-terminal ferroelectric-semiconductor lateral heterostructures

Kamal Asadi

APPLIED PHYSICS REVIEWS (2020)

添加到收藏夹

Article Physics, Applied

Optically Rewritable Memory in a Graphene-Ferroelectric-Photovoltaic Heterostructure

D. Kundys et al.

PHYSICAL REVIEW APPLIED (2020)

添加到收藏夹

Editorial Material Engineering, Electrical & Electronic

In-memory computing with ferroelectrics

Rui Yang

NATURE ELECTRONICS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Optoelectronic Ferroelectric Domain-Wall Memories Made from a Single Van Der Waals Ferroelectric

Fei Xue et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

添加到收藏夹

Review Nanoscience & Nanotechnology

Two-dimensional materials for next-generation computing technologies

Chunsen Liu et al.

NATURE NANOTECHNOLOGY (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity

Li Liu et al.

NANO LETTERS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Guangjian Wu et al.

NATURE ELECTRONICS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Fei Xue et al.

ADVANCED MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Two-Dimensional van der Waals Materials with Aligned In-Plane Polarization and Large Piezoelectric Effect for Self-Powered Piezoelectric Sensors

Mingjin Dai et al.

NANO LETTERS (2019)

添加到收藏夹

Article Computer Science, Information Systems

Nonvolatile memristor based on heterostructure of 2D room-temperature ferroelectric α-In2Se3 and WSe2

Huai Yang et al.

SCIENCE CHINA-INFORMATION SCIENCES (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Nonvolatile Ferroelectric Memory Effect in Ultrathin -In2Se3

Siyuan Wan et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two-Dimensional Atomic Crystals

Liwei Liu et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

A ferroelectric semiconductor field-effect transistor

Mengwei Si et al.

NATURE ELECTRONICS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

Mengwei Si et al.

ACS NANO (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

Xing Wu et al.

ADVANCED SCIENCE (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

Yu Zhou et al.

NANO LETTERS (2017)

添加到收藏夹

Article Multidisciplinary Sciences

Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

Wenjun Ding et al.

NATURE COMMUNICATIONS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2

Deep Jariwala et al.

NANO LETTERS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures

Shuoguo Yuan et al.

ADVANCED MATERIALS (2016)

添加到收藏夹

Article Physics, Applied

Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

Youngseo Park et al.

APPLIED PHYSICS LETTERS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Fermi level, work function and vacuum level

Antoine Kahn

MATERIALS HORIZONS (2016)

添加到收藏夹

Article Multidisciplinary Sciences

Ferroelectrically driven spatial carrier density modulation in graphene

Christoph Baeumer et al.

NATURE COMMUNICATIONS (2015)

添加到收藏夹

Article Nanoscience & Nanotechnology

Atomically thin p-n junctions with van der Waals heterointerfaces

Chul-Ho Lee et al.

NATURE NANOTECHNOLOGY (2014)

添加到收藏夹

Tuned band offset in homogenous TMDs via asymmetric ferroelectric semiconductor gates toward simultaneous rectification and memory

相关参考文献

导出引文

分享论文