Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

The trade-off between mobility and stability in oxide thin-film transistors (TFTs) hinders further advances of an active-matrix flat panel display. Herein, a solution-processed bilayer active channel is designed to improve the stability and mobility simultaneously. The optical bandgap and work function of Tb:In2O3 films are modulated by tuning the film thickness and Tb concentration of Tb-doped indium oxide (Tb:In2O3) films. Large conduction band offset is achieved in a Tb:In2O3 bilayer channel, which induces accumulation of abundant electrons at the interface. The mobility is significantly improved to 38.2 cm(2)/V s, and the photoinduced stability of bilayer Tb:In2O3 TFTs is improved with low threshold voltage shift of 0.26 and -0.38 V under negative-bias illumination stress and negative-bias temperature illumination stress, respectively.

Automated summary

A solution-processed bilayer active channel is designed to improve the stability and mobility of Tb-doped indium oxide (Tb:In2O3) thin-film transistors. The bilayer channel has a large conduction band offset, leading to accumulation of abundant electrons at the interface and significant improvement in mobility. Additionally, the bilayer Tb:In2O3 transistors exhibit good stability under photoinduced stress.