High overall performance uni-traveling carrier photodiodes for sub-THz wave generation

Modified near-ballistic uni-traveling-carrier photodiodes with improved overall performances were studied theo-retically and experimentally. A bandwidth up to 0.2 THz with a 3 dB bandwidth of 136 GHz and large output power of 8.22 dBm (99 GHz) under the -2 V bias voltage were obtained. The device exhibits good linearity in the photocurrent-optical power curve even at large input optical power, with a responsivity of 0.206 A/W. Physical explanations for the improved performances have been made in detail. The absorption layer and the collector layer were optimized to retain a high built-in electric field around the interface, which not only ensures the smoothness of the band structure but also facilitates the near-ballistic transmission of uni-traveling carriers. The obtained results may find potential applications in future high-speed optical communication chips and high-performance terahertz sources.(c) 2023 Optica Publishing Group

Automated summary

Modified near-ballistic uni-traveling-carrier photodiodes with improved overall performances were studied theoretically and experimentally, obtaining a bandwidth up to 0.2 THz, a 3 dB bandwidth of 136 GHz, and a large output power of 8.22 dBm (99 GHz) under a -2 V bias voltage. The device exhibited good linearity in the photocurrent-optical power curve, even at large input optical power, with a responsivity of 0.206 A/W. The optimized absorption layer and collector layer contributed to the improved performances by maintaining a high built-in electric field and facilitating near-ballistic transmission of uni-traveling carriers. The results have potential applications in high-speed optical communication chips and terahertz sources.