期刊
ADVANCED MATERIALS
卷 35, 期 12, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202208497
关键词
artificial retinas; in-sensor computing; perovskite nanocrystals; phototransistor memory; reconfigurable electronics
A phototransistor memory based on air-stable Zr-CsPbI3 perovskite nanocrystals (PNCs) is designed, with broadband photoresponse capability. By utilizing the different electron capture ability of Zr-CsPbI3 PNCs to 650 and 405 nm light, an artificial synapse and non-volatile memory can be created on-demand and quickly reconfigured within a single device for specific purposes. The optically reconfigurable and wavelength-aware operation between short-term plasticity (STP) and long-term plasticity (LTP) modes enables integrated blue feature extraction and target recognition in a homogeneous neuromorphic vision sensor array.
Reconfigurable phototransistor memory attracts considerable attention for adaptive visuomorphic computing, with highly efficient sensing, memory, and processing functions integrated onto a single device. However, developing reconfigurable phototransistor memory remains a challenge due to the lack of an all-optically controlled transition between short-term plasticity (STP) and long-term plasticity (LTP). Herein, an air-stable Zr-CsPbI3 perovskite nanocrystal (PNC)-based phototransistor memory is designed, which is capable of broadband photoresponses. Benefitting from the different electron capture ability of Zr-CsPbI3 PNCs to 650 and 405 nm light, an artificial synapse and non-volatile memory can be created on-demand and quickly reconfigured within a single device for specific purposes. Owing to the optically reconfigurable and wavelength-aware operation between STP and LTP modes, the integrated blue feature extraction and target recognition can be demonstrated in a homogeneous neuromorphic vision sensor array. This work suggests a new way in developing perovskite optoelectronic transistors for highly efficient in-sensor computing.
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