☆ 4.8 Article

Anisotropic Strain-Mediated Symmetry Engineering and Enhancement of Ferroelectricity in Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 Heterostructures

ADVANCED FUNCTIONAL MATERIALS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Review Physics, Condensed Matter

Strain and orientation engineering in ABO3 perovskite oxide thin films

Daniel Sando

Summary: This article reviews the latest research progress in epitaxial strain and orientation engineering in perovskite oxide thin films. It introduces the influence of substrate on film properties, discusses various material case studies, and concludes with open questions and suggestions for future research.

JOURNAL OF PHYSICS-CONDENSED MATTER (2022)

添加到收藏夹

Article Chemistry, Physical

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Yuting Chen et al.

Summary: This research developed high-performance flexible ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) thin film by depositing a buffer layer of Al2O3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibited high remnant polarization (P-r) and maintained good polarization, retention, and endurance performance even at a small bending radius. This work represents a critical advancement in the development of high-performance flexible HfO2-based ferroelectric memories for next-generation wearable electronic devices.

NANO RESEARCH (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Improved polarization and endurance in ferroelectric Hf0.5Zr0.5O2 films on SrTiO3(110)

Tingfeng Song et al.

Summary: The metastable orthorhombic phase of HZO can be stabilized on LSMO/STO(110), resulting in improved ferroelectric properties and higher endurance.

NANOSCALE (2022)

添加到收藏夹

Article Multidisciplinary Sciences

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Yan Cheng et al.

Summary: Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local shifting of two oxygen positions within the unit cells of a ferroelectric thin film. Reversible transition between polar and antipolar phases was induced by applying appropriate voltages. Fatigue and rejuvenation phenomena were observed.

NATURE COMMUNICATIONS (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Large-Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity

Hai Zhong et al.

Summary: Hafnia-based compounds exhibit ferroelectricity and have potential applications in nanoelectronics. In this study, centimeter-scale Hf0.5Zr0.5O2 nanomembranes were prepared and the ferroelectric orthorhombic phase was observed. Capacitors fabricated on flexible substrates using these membranes showed high uniformity, stability, and robustness. The freestanding membranes provide a platform for exploring complex structures in hafnia polymorphic films and advancing flexible nanoelectronics.

ADVANCED MATERIALS (2022)

添加到收藏夹

Article Chemistry, Physical

Anisotropic epitaxial stabilization of a low-symmetry ferroelectric with enhanced electromechanical response

Oliver Paull et al.

Summary: Epitaxial strain and orientation engineering have been combined to create a low-symmetry phase of BiFeO3 with enhanced piezoelectric response, which undergoes a transition to the tetragonal-like polymorph under electric field. This results in an enhanced piezoelectric response throughout the film and associated field-induced reversible strains. This approach offers a way to improve the functionalities of thin-film piezoelectrics, with potential applications in other functional oxides.

NATURE MATERIALS (2022)

添加到收藏夹

Article Multidisciplinary Sciences

Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

Suraj S. Cheema et al.

Summary: This study reports a new method utilizing HfO2-ZrO2 superlattice heterostructures as gate stacks, which does not require scavenging the interfacial SiO2 and can provide lower leakage current and no mobility degradation.

NATURE (2022)

添加到收藏夹

Article Multidisciplinary Sciences

Emergent ferroelectricity in subnanometer binary oxide films on silicon

Suraj S. Cheema et al.

Summary: This study reports on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in ultrathin ZrO2 films. The research explores the unconventional ferroelectric size effects in three-dimensional centrosymmetric materials deposited at the two-dimensional thickness limit, offering promising applications for electronics.

SCIENCE (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance

Tingfeng Song et al.

Summary: The endurance of ferroelectric HfO2 needs to be enhanced for its commercial application. This study shows that fatigue in epitaxial Hf0.5Zr0.5O2 films can be mitigated by increasing the amount of paraelectric phase. Conversely, films almost free of parasitic monoclinic phase exhibit severe fatigue, indicating that fatigue can be inherently pronounced in ferroelectric HfO2.

ADVANCED ELECTRONIC MATERIALS (2022)

添加到收藏夹

Article Chemistry, Physical

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Yu Yun et al.

Summary: Ferroelectricity can be achieved in epitaxial HfO2 films with high structural order, indicating that it is an intrinsic property of HfO2-based materials. This discovery has significant implications for optimizing the performance of HfO2-based materials in device applications.

NATURE MATERIALS (2022)

添加到收藏夹

Article Physics, Applied

Ferroelectric Hf0.5Zr0.5O2 thin films deposited epitaxially on (110)-oriented SrTiO3

Peijie Jiao et al.

Summary: Deposited Hf0.5Zr0.5O2 (HZO) thin films on (110)-oriented SrTiO3 (STO) substrates buffered with epitaxial La0.7Sr0.3MnO3 (LSMO) by pulsed laser deposition exhibit enhanced ferroelectric properties without the need for a wake-up process, providing insights into the effects of orientation, strain, and interface microstructures on metastable polar phases and ferroelectric properties.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Multidisciplinary Sciences

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

Min-Kyu Kim et al.

Summary: Ferroelectric memory has been extensively researched for its potential of higher speed, lower power consumption, and longer endurance compared to conventional flash memory. By utilizing hafnia-based ferroelectrics and oxide semiconductors, it is possible to avoid unwanted interfacial layers and achieve unprecedented Si-free 3D integration of ferroelectric memory, with memory performance surpassing conventional flash memory and previous perovskite ferroelectric memories.

SCIENCE ADVANCES (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Epitaxial Ferroelectric Hf0.5Zr0.5O2 with Metallic Pyrochlore Oxide Electrodes

Zimeng Zhang et al.

Summary: The synthesis of fully epitaxial ferroelectric Hf0.5Zr0.5O2 (HZO) thin films using a conducting pyrochlore oxide electrode as a template is reported. X-ray diffraction and scanning transmission electron microscopy confirm epitaxy and domain formation. The transition from polar-orthorhombic phase to non-polar-monoclinic phase is observed with increased film thickness.

ADVANCED MATERIALS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer

Hongrae Joh et al.

Summary: This study addresses the issue of monoclinic phase formation in HZO materials with increasing film thickness by inserting a dielectric interlayer. The presence of the interlayer allows independent growth of the top and bottom HZO layers, preventing loss of ferroelectricity in thicker HZO films by controlling grain size. Improved 2Pr value of 30.2 mu C/cm(2) was achieved in relatively thicker HZO films by using a TiO2 dielectric interlayer.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

Pavan Nukala et al.

Summary: This study found that ferroelectricity in hafnia-based thin films is closely related to oxygen voltammetry, as reversible oxygen vacancy migration is observed when the top electrode is oxygen reactive, with electrodes serving as sources and sinks of oxygen, and the dielectric layer acting as a fast conduit at millisecond time scales.

SCIENCE (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Insights into the atomic structure of the interface of ferroelectric Hf0.5Zr0.5O2 grown epitaxially on La2/3Sr1/3MnO3

Saul Estandia et al.

Summary: Epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films stabilizes the metastable orthorhombic phase with robust ferroelectric properties, commonly achieved by inserting a buffer layer of La2/3Sr1/3MnO3 (LSMO) on perovskite substrates. Chemical reconstruction on the LSMO surface replaces Mn cations with a mixture of Hf/Zr cations to balance surface charge. The interface between HZO and LSMO, despite structural mismatch, is relatively sharp with a thickness of around 2 atomic layers.

PHYSICAL REVIEW MATERIALS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering

Alireza Kashir et al.

Summary: By tuning the ozone pulse duration, annealing process, and metal/insulator interface, a wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization value was achieved. The use of a tungsten capping electrode and insertion of a Pt layer between the interfaces helped reduce leakage current while maintaining the 2Pr value constant.

ACS APPLIED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Uniaxial Strain-Controlled Ground States in Manganite Films

Feng Jin et al.

NANO LETTERS (2020)

添加到收藏夹

Article Multidisciplinary Sciences

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Suraj S. Cheema et al.

NATURE (2020)

添加到收藏夹

Article Multidisciplinary Sciences

Scale-free ferroelectricity induced by flat phonon bands in HfO2

Hyun-Jae Lee et al.

SCIENCE (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

Pavan Nukala et al.

FERROELECTRICS (2020)

添加到收藏夹

Article Physics, Applied

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

J. Lyu et al.

APPLIED PHYSICS LETTERS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Anisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design

T. Nan et al.

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

On the Origin of the Large Remanent Polarization in La:HfO2

Tony Schenk et al.

ADVANCED ELECTRONIC MATERIALS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Direct Epitaxial Growth of Polar (1-x)HfO2-(x)ZrO2 Ultrathin Films. on Silicon

Pavan Nukala et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Saul Estandia et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain-Inspired Computing

Herng Yau Yoong et al.

ADVANCED FUNCTIONAL MATERIALS (2018)

添加到收藏夹

Article Chemistry, Physical

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

Yingfen Wei et al.

NATURE MATERIALS (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

Min Hyuk Park et al.

NANOSCALE (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

Fabian Ambriz-Vargas et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

添加到收藏夹

Article Materials Science, Multidisciplinary

Induction of ferroelectricity in nanoscale ZrO2/HfO2 bilayer thin films on Pt/Ti/SiO2/Si substrates

Y. W. Lu et al.

ACTA MATERIALIA (2016)

添加到收藏夹

Article Materials Science, Multidisciplinary

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Dayu Zhou et al.

ACTA MATERIALIA (2015)

添加到收藏夹

Article Multidisciplinary Sciences

Evolution and control of the phase competition morphology in a manganite

Haibiao Zhou et al.

NATURE COMMUNICATIONS (2015)

添加到收藏夹

Article Physics, Applied

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

Min Hyuk Park et al.

APPLIED PHYSICS LETTERS (2014)

添加到收藏夹

Article Materials Science, Multidisciplinary

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes

Min Hyuk Park et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2014)

添加到收藏夹

Article Materials Science, Multidisciplinary

Tuning the ground state of La0.67Ca0.33MnO3 films via coherent growth on orthorhombic NdGaO3 substrates with different orientations

Z. Huang et al.

PHYSICAL REVIEW B (2012)

添加到收藏夹

Article Physics, Applied

Ferroelectricity in hafnium oxide thin films

T. S. Boescke et al.

APPLIED PHYSICS LETTERS (2011)

添加到收藏夹

Article Chemistry, Multidisciplinary

Nanoscale Control of Domain Architectures in BiFeO3 Thin Films

Ying-Hao Chu et al.

NANO LETTERS (2009)

添加到收藏夹

Article Instruments & Instrumentation

Quantitative mapping of switching behavior in piezoresponse force microscopy

Stephen Jesse et al.

REVIEW OF SCIENTIFIC INSTRUMENTS (2006)

添加到收藏夹

Article Materials Science, Multidisciplinary

Strain-induced crossover of the metal-insulator transition in perovskite manganites

Y Ogimoto et al.

PHYSICAL REVIEW B (2005)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.