4.6 Article

Electromechanical Behavior of Al/Al2O3 Multilayers on Flexible Substrates: Insights from In Situ Film Stress and Resistance Measurements

期刊

ADVANCED ENGINEERING MATERIALS
卷 25, 期 2, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adem.202200951

关键词

amorphous oxides; cracking; mechanical properties; multilayer thin films; tensile test

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A series of Al and Al/Al2O3 thin-film multilayer structures were fabricated on flexible polymer substrates using a unique deposition chamber combining magnetron sputtering and atomic layer deposition, and were thoroughly characterized using transmission electron microscopy. The electromechanical behavior of the multilayers and Al reference films was investigated, and it was found that all films exhibited excellent interfacial adhesion without delamination in the investigated strain range. The adhesion-promoting naturally forming amorphous interlayer was confirmed for the first time for thin films sputter deposited onto polymers under laboratory conditions.
A series of Al and Al/Al2O3 thin-film multilayer structures on flexible polymer substrates are fabricated with a unique deposition chamber combining magnetron sputtering (Al) and atomic layer deposition (ALD, Al2O3, nominal thickness 2.4-9.4 nm) without breaking vacuum and thoroughly characterized using transmission electron microscopy (TEM). The electromechanical behavior of the multilayers and Al reference films is investigated in tension with in situ X-ray diffraction (XRD) and four-point probe resistance measurements. All films exhibit excellent interfacial adhesion, with no delamination in the investigated strain range (12%). For the first time, an adhesion-promoting naturally forming amorphous interlayer is confirmed for thin films sputter deposited onto polymers under laboratory conditions. The evolution of Al film stresses and electrical resistance reveal changes in the deformation behavior as a function of oxide thickness. Strengthening of Al is observed with increasing oxide thickness. Significant embrittlement can be avoided for oxide layer thicknesses <= 2.4 nm.

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