Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction

In the recent decade, there is a growing interest in Hf0.5Zr0.5O2 (HZO) thin films owing to their well-behaved ferroelectricity and high compatibility with semi-conductor integrated circuit technology. The ferroelectric properties of HZO are highly pertinent to the wake-up effect, which has been reported to be associated with the monoclinic (m-), orthorhombic (o-), and tetragonal (t-) phases. However, it is very challenging to distinguish the o-and t-phases by conventional X-ray diffraction. In this study, the HZO thin films with and without the need for the wake-up process to enhance the ferroelectricity were prepared, and the precession electron diffraction (PED) phase mapping technique was utilized to identify the crystalline phases in the HZO layers. The PED characterization reveals the correlation between the phase transformation and the wake-up effect in HZO. The absence of the t-phase is responsible for the wake-up-free property in the ferroelectric HZO thin film. The wake-up-free and pronounced ferroelectricity of the nanoscale HZO thin film in this study may bring a practical impact on a variety of ferroelectric applications.

Automated summary

In recent years, the interest in Hf0.5Zr0.5O2 (HZO) thin films has grown due to their well-behaved ferroelectricity and high compatibility with semiconductor integrated circuit technology. The phase transformation and wake-up effect in HZO were identified using the precession electron diffraction (PED) phase mapping technique. The absence of the tetragonal (t-) phase is responsible for the wake-up-free property in the ferroelectric HZO thin film. The wake-up-free and pronounced ferroelectricity of the nanoscale HZO thin film in this study may have practical implications for various ferroelectric applications.