4.8 Article

Epitaxial Growth of Single-Layer Kagome Nanoflakes with Topological Band Inversion

期刊

ACS NANO
卷 16, 期 12, 页码 21079-21086

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c08895

关键词

scanning tunnelling microscopy; kagome lattice; molecular beam epitaxy; compact localized states; topological phases

资金

  1. Natural Science Foundation of China [U2032147, 62274118, 21872100, 12004278]
  2. Science and Engineering Research Council of A*STAR (Agency for Science, Technology and Research) Singapore [A20G9b0135, A20H9a0242]
  3. Natural Science Foundation of Fujian Province [2022J06035]
  4. Singapore MOE AcRF Tier 2 grant [MOE-T2EP50220-0001, MOE2018-T3-1-002]
  5. St. Catherine's College, Oxford

向作者/读者索取更多资源

This study reports the growth of single-layer iron germanide kagome nanoflakes and reveals the electronic localization of the kagome flat bands using scanning tunneling microscopy/spectroscopy. First-principles calculations demonstrate the topological nature and edge mode of the observed kagome materials.
The kagome lattice has attracted intense interest with the promise of realizing topological phases built from strongly interacting electrons. However, fabricating two-dimensional (2D) kagome materials with nontrivial topology is still a key challenge. Here, we report the growth of single-layer iron germanide kagome nanoflakes by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we unravel the real-space electronic localization of the kagome flat bands. First-principles calculations demonstrate the topological band inversion, suggesting the topological nature of the experimentally observed edge mode. Apart from the intrinsic topological states that potentially host chiral edge modes, the realization of kagome materials in the 2D limit also holds promise for future studies of geometric frustration.

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