4.8 Article

Optically Triggered Neel Vector Manipulation of a Metallic Antiferromagnet Mn2Au under Strain

期刊

ACS NANO
卷 16, 期 12, 页码 20589-20597

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c07453

关键词

antiferromagnetic spintronics; optical manipulation of staggered magnetization; domain wall dynamics; deptuilillg transition; strain; metallic antiferromagnets

资金

  1. Deutsche Forschungsgemein-sch a f t (DFG, German Research Foundation)
  2. Horizon 2020 Framework Program of the European Commission
  3. Graduate School of Excellence ?
  4. Agence Nationale de la Recherche
  5. [TRR 173-268565370]
  6. [863155]

向作者/读者索取更多资源

The absence of stray fields, insensitivity to external magnetic fields, and ultrafast dynamics make antiferromagnets promising candidates for active elements in spintronic devices. Researchers demonstrate successful manipulation of the Neel vector in the metallic collinear antiferromagnet Mn2Au by using strain and femtosecond laser excitation. The aligned state achieved through this method is stable at room temperature and insensitive to magnetic fields, suggesting potential applications in robust high-density memory devices.
The absence of stray fields, their insensitivity to external magnetic fields, and ultrafast dynamics make antiferromagnets promising candidates for active elements in spintronic devices. Here, we demonstrate manipulation of the Neel vector in the metallic collinear antiferromagnet Mn2Au by combining strain and femtosecond laser excitation. Applying tensile strain along either of the two in-plane easy axes and locally exciting the sample by a train of femtosecond pulses, we align the Neel vector along the direction controlled by the applied strain. The dependence on the laser fluence and strain suggests the alignment is a result of optically triggered depinning of 90 degrees domain walls and their motion in the direction of the free energy gradient, governed by the magneto-elastic coupling. The resulting, switchable state is stable at room temperature and insensitive to magnetic fields. Such an approach may provide ways to realize robust high-density memory device with switching time scales in the picosecond range.

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