Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots

We demonstrate the ability to tailor self-assembled growth of In0.5Ga0.5As quantum dots (QDs) on GaSb(111)A surfaces by molecular beam epitaxy. Spontaneous formation via the Volmer-Weber growth mode produces QDs with excellent structural and optical quality. By harnessing tensile strain to reduce their band gap energy, these QDs are characterized by light emission that extends into the midwave infrared wavelength range of 3.2-3.9 mu m (0.318-0.388 eV). As we increase QD size, we can tune the band alignment from type-III to type-II, where light emission occurs due to interband recombination between quantum confined electrons in the InGaAs QDs and holes in the GaSb barriers. Of particular interest is an unusual blue-shift in emission wavelength with increasing QD size, which we attribute to the incorporation of Sb into the InGaAs QDs from the GaSb barriers. By expanding this approach to produce tensile-strained QDs from other narrow band gap semiconductors, we anticipate the development of a range of highly tunable mid-infrared light sources.

Automated summary

In this study, we showcase the tailored self-assembled growth of In0.5Ga0.5As quantum dots (QDs) on GaSb(111)A surfaces using molecular beam epitaxy. These QDs demonstrate excellent structural and optical quality through spontaneous Volmer-Weber growth. By utilizing tensile strain, we are able to reduce their band gap energy and achieve light emission in the midwave infrared wavelength range. Furthermore, we observe a blue-shift in emission wavelength with increasing QD size, which we attribute to the incorporation of Sb into the InGaAs QDs from the GaSb barriers. This research holds significant importance as it paves the way for the development of highly tunable mid-infrared light sources.