Wafer-Scale Production of Two-Dimensional Tin Monoselenide: Expandable Synthetic Platform for van der Waals Semiconductor-Based Broadband Photodetectors

A synthetic platform for industrially applicable two-dimensional (2D) semiconductors that addresses the paramount issues associated with large-scale production, wide-range photosensitive materials, and oxidative stability has not yet been developed. In this study, we attained the 6 in. scale production of 2D SnSe semiconductors with spatial homogeneity using a rational synthetic platform based on the thermal decomposition of solution-processed single-source precursors. The long-range structural and chemical homogeneities of the 2D SnSe layers are manifested using comprehensive spectroscopic analyses. Furthermore, the capability of the SnSe-based photodetectors for broadband photodetection is distinctly verified. The photoresponsivity and detectivity of the SnSe-based photodetectors are 5.89 A W-1 and 1.8 x 10(11) Jones at 532 nm, 1.2 A W-1 and 3.7 x 10(10) Jones at 1064 nm, and 0.14 A W-1 and 4.3 x 10(9) Jones at 1550 nm, respectively. The minimum rise times for the 532 and 1064 nm lasers are 62 and 374 mu s, respectively. The photoelectrical analysis of the 5 x 5 SnSe-based photodetector array reveals 100% active devices with 95.06% photocurrent uniformity. We unequivocally validated that the air and thermal stabilities of the photocurrent yielded from the SnSe-based photodetector are determined to be > 30 d in air and 160 ?, respectively, which are suitable for optoelectronic applications.

Automated summary

In this study, a synthetic platform for large-scale production of 2D SnSe semiconductors was developed. The SnSe-based photodetectors showed broadband photodetection capabilities, and their performance and stability were evaluated.