4.8 Article

Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Chemistry, Physical

Contribution of Anisotropic Lattice-Strain to Piezoelectricity and Electromechanical Power Generation of Flexible Inorganic Halide Thin Films

Da Bin Kim et al.

Summary: Strain engineering has become a critical strategy for improving the optoelectronic properties of perovskite halide materials. This study proposes an in situ-strain-engineering method to induce compressive or tensile strain in flexible inorganic-halide CsPbBr3 thin films. The results show that the optimized compressively 0.75%-strained CsPbBr3 thin films achieve the best piezoelectric energy harvesting values, which are nearly 3.8 and 7.1 times better than the unstrained reference.

ADVANCED ENERGY MATERIALS (2022)

Article Nanoscience & Nanotechnology

Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide-Bandgap Electronics

Yi-Yu Zhang et al.

Summary: This study demonstrates a novel method for transferring flexible AlGaN/GaN HEMTs from insulating substrates to flexible ones, achieving good electrical performance and piezoelectric behavior. Mechanical bending can further enhance the performance of AlGaN/GaN HEMTs. The results show great potential for this device in next-generation flexible electronics applications.

ADVANCED ELECTRONIC MATERIALS (2022)

Article Chemistry, Physical

Highly conductive and flexible electrodes based on ultrathin aluminum-doped zinc oxide epitaxial films

Yongkuan Li et al.

Summary: In this study, ultrathin, highly conductive, single-crystalline, and mechanically robust AZO electrodes were successfully developed on flexible Hastelloy substrates. The epitaxial growth and thickness control of the electrodes led to excellent performance and mechanical durability, with abnormally high carrier concentrations likely caused by piezopotential. The ultrathin electrode demonstrated a resistivity as low as similar to 22 mu Omega.cm, showcasing its potential for next generation flexible devices.

APPLIED SURFACE SCIENCE (2021)

Article Chemistry, Physical

Effects of thermal annealing on the structural and electrical properties of ZnO thin films for boosting their piezoelectric response

Quang Chieu Bui et al.

Summary: High temperature annealing under oxygen atmosphere has significant effects on the structure and properties of ZnO thin films, leading to improvements in grain boundary velocity and piezoelectric amplitude, ultimately enhancing the piezoelectric performance.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

Article Crystallography

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro-Optical Applications

Vijay S. Rana et al.

Summary: In this study, fixed Al-doped zinc oxide thin films were fabricated at different radio frequency powers, showing significant effects on the structure, stress, morphology, thickness, optical bandgap, and conductivity of the films. Increasing RF power led to a decrease in optical bandgap and an increase in conductivity.

CRYSTAL RESEARCH AND TECHNOLOGY (2021)

Article Physics, Condensed Matter

Crystal Orientation of Cubic NiO Thin Films Formed on Monoclinic β-Ga2O3 Substrates

Shinji Nakagomi et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)

Article Nanoscience & Nanotechnology

Surface Modification of Al-Doped ZnO Transparent Conducive Thin Films with Polycrystalline Zinc Molybdenum Oxide

Lei Meng et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Article Chemistry, Physical

AZO (Al:ZnO) thin films with high figure of merit as stable indium free transparent conducting oxide

Bikash Sarma et al.

APPLIED SURFACE SCIENCE (2019)

Article Chemistry, Multidisciplinary

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Amador Perez-Tomas

ADVANCED MATERIALS INTERFACES (2019)

Article Chemistry, Multidisciplinary

CMOS-Compatible Titanium Nitride for On-Chip Plasmonic Schottky Photodetectors

Jacek Gosciniak et al.

ACS OMEGA (2019)

Article Engineering, Electrical & Electronic

Low resistance Ga-doped ZnO ohmic contact to p-GaN by reducing the sputtering power

Wen Gu et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)

Review Engineering, Electrical & Electronic

Review of technology for normally-off HEMTs with p-GaN gate

Giuseppe Greco et al.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)

Article Materials Science, Multidisciplinary

Ti/Al-based contacts to p-type SiC and GaN for power device applications

F. Roccaforte et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)

Article Engineering, Electrical & Electronic

High-Performance GaN-Based LEDs With AZO/ITO Thin Films as Transparent Contact Layers

Dan Chen et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)

Article Nanoscience & Nanotechnology

Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films

Nhat Hong Tran Nguyen et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Nanoscience & Nanotechnology

Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor

Chong Tong et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Chemistry, Physical

Ohmic contacts to Gallium Nitride materials

Giuseppe Greco et al.

APPLIED SURFACE SCIENCE (2016)

Article Nanoscience & Nanotechnology

Ohmic Contacts on p-GaN

Jingli Chen et al.

ADVANCED ELECTRONIC MATERIALS (2015)

Article Physics, Condensed Matter

Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping

Yingda Chen et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)

Article Physics, Multidisciplinary

Low resistance and transparent Ag/AZO ohmic contact to p-GaN

T. Han et al.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2014)

Article Nanoscience & Nanotechnology

Impact of Inter layer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

S. Chandramohan et al.

ACS APPLIED MATERIALS & INTERFACES (2013)

Article Materials Science, Multidisciplinary

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

W. F. Yang et al.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2012)

Article Chemistry, Physical

Effect of Ga dissolution in Au of Ni-Au system on ohmic contact formation to p-type GaN

Jiin-Long Yang et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2006)

Article Physics, Applied

Mechanism for Ohmic contact formation of oxidized Ni/Au on p-type GaN

HW Jang et al.

JOURNAL OF APPLIED PHYSICS (2003)

Article Physics, Applied

Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN

JO Song et al.

APPLIED PHYSICS LETTERS (2003)

Article Physics, Applied

Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN

RH Horng et al.

APPLIED PHYSICS LETTERS (2001)

Article Physics, Applied

p-GaN surface treatments for metal contacts

JX Sun et al.

APPLIED PHYSICS LETTERS (2000)