☆ 4.8 Article

High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

ACS APPLIED MATERIALS & INTERFACES (2022)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Chemistry, Multidisciplinary

Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity

Sayantan Ghosh et al.

Summary: This study explores the use of WSe2/SnSe2 type-III structures in photodetectors, showing high negative responsivity and fast response time with controllable photocurrent polarity. By adjusting the band alignment from type-II to type-III, a significant enhancement in responsivity can be achieved, further supported by density functional theory calculations.

ACS NANO (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Perovskite Quantum Dot-Ta2NiSe5 Mixed-Dimensional Van Der Waals Heterostructures for High-Performance Near-Infrared Photodetection

Jie Qiao et al.

Summary: A near-infrared photodetector based on MQDs and Ta2NiSe5 was fabricated, showing ultra-sensitive photoresponse, and the field-effect mobility and responsivity were enhanced by combining the two materials.

ADVANCED FUNCTIONAL MATERIALS (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Ultrasensitive and Broad-Spectrum Photodetectors Based on InSe/ReS2 Heterostructure

Haixin Ma et al.

Summary: A highly sensitive and broad-spectrum photodetector based on InSe/ReS2 vertical heterostructure is reported, featuring high detectivity and excellent performance metrics, indicating promising potential in the field of photodetection.

ADVANCED OPTICAL MATERIALS (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Van der Waals MoS2/PdSe2 Heterostructures Grown by Chemical Vapor Deposition for Broadband and Polarized Photodetection

Honglei Gao et al.

Summary: This study explores the use of van der Waals heterostructures composed of MoS2 and PdSe2 for photodetection. The heterostructures exhibit enhanced light absorption and type-II band alignment, enabling high responsivity, detectivity, and rapid response speed to near-infrared light. The photodetector also demonstrates broadband photoresponse and good polarization sensitivity.

ADVANCED MATERIALS INTERFACES (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Fourfold Polarization-Sensitive Photodetector Based on GaTe/MoS2 van der Waals Heterojunction

Jin Tan et al.

Summary: Integrated polarization-sensitive photodetectors fabricated by geometric anisotropic 2D materials have gained increasing attention in recent years. The successful construction of self-driven and polarization-sensitive photodetectors based on GaTe/MoS2 p-n van der Waals (vdW) heterojunctions was demonstrated using mechanical exfoliation and dry transfer methods. The fabricated GaTe/MoS2 vdW heterojunctions exhibit ambipolar behavior with high rectification ratio, responsivity under 532 nm illumination, and photocurrent polarization with fourfold anisotropy and high polarization ratio.

ADVANCED ELECTRONIC MATERIALS (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Band alignment of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 van der Waals heterostructures for highly enhanced photoelectric responses

Mingwei Luo et al.

Summary: Heterostructures based on SnS2/Bi2X3 (X = Se, Te) van der Waals heterostructures grown through a combination of physical vapor deposition and chemical vapor deposition show improved photoelectric properties and responses. The successful design of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 heterostructures greatly enhances the charge carrier transportation and interface dynamics, leading to a significant increase in photocurrent densities. Explained improvements in photoelectric performance include effective charge separation, enhanced charge-transfer efficiency and carrier density at the interface, and expanded light absorption range. Additionally, the vertical SnS2 enhances light trapping efficiency, with the type-I SnS2/Bi2Se3 heterostructure exhibiting higher photoelectric response compared to the type-II SnS2/Bi2Te3 heterostructure due to more efficient charge transportation at the type-I interface. These results suggest the potential development of high-performance photodetectors and other optoelectronic devices through suitable heterostructures.

SCIENCE CHINA-MATERIALS (2022)

添加到收藏夹

Article Chemistry, Physical

PdSe2/MoSe2 vertical heterojunction for self-powered photodetector with high performance

Jiahong Zhong et al.

Summary: Engineering of van der Waals' two-dimensional material heterostructures has led to the fabrication of a high-performance self-powered photodetector with excellent current rectification characteristics and photovoltaic behaviors, capable of responding to a broad spectrum from visible to near-infrared with high responsivity and fast response speed. The heterojunction photodetector demonstrated great application potential in image recognition and is expected to bring new opportunities for highly sensitive, high-speed, and energy-efficient photodetectors for comprehensive applications.

NANO RESEARCH (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Performance Photodetectors Based on MoTe2-MoS2 van der Waals Heterostructures

Xuan Ji et al.

Summary: The research team successfully fabricated MoTe2-MoS2 van der Waals heterostructure photodetectors with great performance, operating without bias voltage, high photocurrent on/off ratio, and high photoresponsivity.

ACS OMEGA (2022)

添加到收藏夹

Article Physics, Applied

Two-dimensional Ta2NiSe5/GaSe van der Waals heterojunction for ultrasensitive visible and near-infrared dual-band photodetector

Yan Zhang et al.

Summary: Dual-band photodetectors have attracted intensive attention due to the need for multiband information in multicolor imaging technology. A VIS-NIR dual-band photodetector based on a multilayer Ta2NiSe5/GaSe heterojunction has been fabricated, showing enhanced responsivity and suppressed dark current, suggesting its potential for ultrasensitive dual-band photodetection in visible and near-infrared ranges.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Review Nanoscience & Nanotechnology

2D Material-Based Photodetectors for Infrared Imaging

Zhongzhou Cheng et al.

Summary: Infrared detection and imaging, as a dynamic research field, has broad prospects in areas such as spectra-chemistry, biomedicine, and artificial intelligence. The use of 2D materials to manufacture ultrathin and flexible optoelectronic devices offers opportunities for applications beyond imagination.

SMALL SCIENCE (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Self-Driven WSe2/Bi2O2Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response

Peng Luo et al.

Summary: This study reports a WSe2/Bi2O2Se Van der Waals p-n heterostructure with superior performance in photodetection, showing promising potentials for high-performance self-driven photodetector applications.

ADVANCED FUNCTIONAL MATERIALS (2021)

添加到收藏夹

Review Materials Science, Multidisciplinary

Recent Progress in Short- to Long-Wave Infrared Photodetection Using 2D Materials and Heterostructures

Xinwei Guan et al.

Summary: 2D materials show promise in optoelectronic applications, particularly in infrared detectors, due to their unique electronic, optical, and mechanical properties. Recent research focuses on the design and optimization of devices in the short-wave, mid-wave, and long-wave infrared regimes, discussing the impact of 2D material properties on device performance and the characteristics and challenges of heterostructures based on 2D materials.

ADVANCED OPTICAL MATERIALS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Van der Waals PdSe2/WS2 Heterostructures for Robust High-Performance Broadband Photodetection from Visible to Infrared Optical Communication Band

Xiaolin Kang et al.

Summary: The development of a PdSe2/WS2 heterostructure for photodetection shows superior performance compared to single-layer WS2 devices, attributed to the type I band alignment of the heterostructure enabling broadband spectral photoresponse.

ADVANCED OPTICAL MATERIALS (2021)

添加到收藏夹

Article Computer Science, Information Systems

Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector

Xing Liu et al.

Summary: A high-performance broadband photodetector was demonstrated by constructing a Bi2O2Se/BP van der Waals heterojunction, showing low dark current and fast response time, with high responsivity and specific detectivity at different wavelengths.

SCIENCE CHINA-INFORMATION SCIENCES (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Highly In-Plane Anisotropic Two-Dimensional Ternary Ta2NiSe5 for Polarization-Sensitive Photodetectors

Jie Qiao et al.

Summary: This study systematically researched the anisotropic electron transport and optoelectrical properties of multilayer 2D ternary Ta2NiSe5, identifying key characteristics such as anisotropy ratio and field-effective mobility, which are important for understanding and utilizing these materials.

ACS APPLIED MATERIALS & INTERFACES (2021)

添加到收藏夹

Review Chemistry, Multidisciplinary

Van der Waals Integration Based on Two-Dimensional Materials for High-Performance Infrared Photodetectors

Haoyun Wang et al.

Summary: This review presents recent progress in vdW integration-based infrared photodetectors, including working mechanisms and advantages of different structures, 2D/nD vdW integration, band engineering, and device performance.

ADVANCED FUNCTIONAL MATERIALS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Ultra-broadband photodetection based on two-dimensional layered Ta2NiSe5 with strong anisotropy and high responsivity

Yan Zhang et al.

Summary: High-quality Ta2NiSe5 was synthesized by CVT, and a broadband photodetector with fast response, high responsivity, and excellent stability was fabricated. The device showed promise in the field of neotype electronics and optoelectronics.

MATERIALS & DESIGN (2021)

添加到收藏夹

Article Chemistry, Physical

Common microscopic origin of the phase transitions in Ta2NiS5 and the excitonic insulator candidate Ta2NiSe5

Lukas Windgaetter et al.

Summary: Through first-principles calculations, it was found that the structural phase transition in Ta2NiSe5 and Ta2NiS5 is driven by phonon instabilities rather than excitonic instabilities. Phonons break the crystal symmetry, leading to changes in the electronic band structure.

NPJ COMPUTATIONAL MATERIALS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Strong Interlayer Transition in Few-Layer InSe/PdSe2 van der Waals Heterostructure for Near-Infrared Photodetection

Waqas Ahmad et al.

Summary: This study demonstrates a highly sensitive type-II InSe/PdSe2 van der Waals heterostructure for NIR photodetection. The strong interlayer transition between InSe and PdSe2 is predicted and confirmed, leading to promising results in terms of photoresponsivity, detectivity, and external quantum efficiency. Construction of vdWs heterostructures with strong interlayer transition shows great potential for infrared photodetection and high-performance optoelectronic devices.

ADVANCED FUNCTIONAL MATERIALS (2021)

添加到收藏夹

Article Optics

Underwater compressive computational ghost imaging with wavelet enhancement

Tao Wang et al.

Summary: In this study, a compressive Hadamard computational ghost imaging (CGI) method was proposed to restore clear images of objects in the underwater environment. Through experimental investigations, the proposed method was shown to achieve clear imaging for underwater objects with a sub-Nyquist sampling ratio, demonstrating its effectiveness and advantages in improving image quality for underwater CGI.

APPLIED OPTICS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

A high-performance short-wave infrared phototransistor based on a 2D tellurium/MoS2 van der Waals heterojunction

Jinrong Yao et al.

Summary: This study presents the hydrothermal synthesis of air-stable 2D tellurium and the fabrication of a Te/MoS2 van der Waals heterojunction for a high-performance short-wave infrared (SWIR) photodetector. The heterostructure exhibits well-behaved field-effect transistor properties with a high ON/OFF ratio and a steep subthreshold swing. The photodetector's response spectrum covers the whole SWIR band with high detectivity at different wavelengths.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

High-Performance Broadband Photodetectors Based on n-MoS2/p-Ge0.9Sn0.1 Heterojunctions

Kaixiang Shu et al.

Summary: In this work, high-performance self-powered photodetectors with spectral coverage ranging from visible to near-infrared range have been successfully fabricated by combining a p-type Ge0.9Sn0.1 thin film with an n-type multilayered MoS2 into a type-II band alignment. The constructed P-N heterojunction showed superior zero-biased photodetection performance with a fast response time, ultralow dark current, and high photoswitching ratio. This research provides promising candidates for self-powered photodetectors with broadband, fast speed, high sensitivity, and low power consumption.

ACS APPLIED ELECTRONIC MATERIALS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

High-Performance p-BP/n-PdSe2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse

Amir Muhammad Afzal et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

GaSe/MoS2 Heterostructure with Ohmic-Contact Electrodes for Fast, Broadband Photoresponse, and Self-Driven Photodetectors

Zhenbei He et al.

ADVANCED MATERIALS INTERFACES (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2

Daniel S. Schneider et al.

ACS PHOTONICS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts

Mingjin Dai et al.

ACS NANO (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Electrically Stimulated Band Alignment Transit in Black Phosphorus/β-Ga2O3Heterostructure Dual-band Photodetector

Chang Li et al.

CHEMICAL RESEARCH IN CHINESE UNIVERSITIES (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction

Gwang Hyuk Shin et al.

NANO LETTERS (2020)

添加到收藏夹

Review Chemistry, Multidisciplinary

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Hari Singh Nalwa

RSC ADVANCES (2020)

添加到收藏夹

Review Chemistry, Multidisciplinary

2D Metal Chalcogenides for IR Photodetection

Fakun Wang et al.

SMALL (2019)

添加到收藏夹

Article Chemistry, Inorganic & Nuclear

Strong Electron-Phonon Coupling in the Excitonic Insulator Ta2NiSe5

Jian Yan et al.

INORGANIC CHEMISTRY (2019)

添加到收藏夹

Review Materials Science, Multidisciplinary

Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors

Bing Wang et al.

APPLIED MATERIALS TODAY (2019)

添加到收藏夹

Article Multidisciplinary Sciences

High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region

Feng Wu et al.

NATURE COMMUNICATIONS (2019)

添加到收藏夹

Review Materials Science, Multidisciplinary

Design strategies for two-dimensional material photodetectors to enhance device performance

Jun Wang et al.

INFOMAT (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor

Xuechao Yu et al.

NATURE COMMUNICATIONS (2018)

添加到收藏夹

Review Chemistry, Multidisciplinary

Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared

Jianlu Wang et al.

SMALL (2017)

添加到收藏夹

Review Nanoscience & Nanotechnology

2D transition metal dichalcogenides

Sajedeh Manzeli et al.

NATURE REVIEWS MATERIALS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Lateral Graphene-Contacted Vertically Stacked WS2/MoS2 Hybrid Photodetectors with Large Gain

Haijie Tan et al.

ADVANCED MATERIALS (2017)

添加到收藏夹

Review Chemistry, Multidisciplinary

Perovskite-based photodetectors: materials and devices

Huan Wang et al.

CHEMICAL SOCIETY REVIEWS (2017)

添加到收藏夹

Review Chemistry, Multidisciplinary

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Chaoliang Tan et al.

CHEMICAL REVIEWS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer

Manh-Ha Doan et al.

ACS NANO (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ternary Ta2NiSe5 Flakes for a High-Performance Infrared Photodetector

Liang Li et al.

ADVANCED FUNCTIONAL MATERIALS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Qiushi Guo et al.

NANO LETTERS (2016)

添加到收藏夹

Review Optics

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

Kin Fai Mak et al.

NATURE PHOTONICS (2016)

添加到收藏夹

Article Nanoscience & Nanotechnology

Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction

Lei Ye et al.

ACS PHOTONICS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors

Xing Zhou et al.

ADVANCED MATERIALS (2015)

添加到收藏夹

Review Chemistry, Multidisciplinary

Functionalized graphene and other two-dimensional materials for photovoltaic devices: device design and processing

Zhike Liu et al.

CHEMICAL SOCIETY REVIEWS (2015)

添加到收藏夹

Editorial Material Materials Science, Multidisciplinary

The AFLOW standard for high-throughput materials science calculations

Camilo E. Calderon et al.

COMPUTATIONAL MATERIALS SCIENCE (2015)

添加到收藏夹

Article Nanoscience & Nanotechnology

Graphene photodetectors with ultra-broadband and high responsivity at room temperature

Chang-Hua Liu et al.

NATURE NANOTECHNOLOGY (2014)

添加到收藏夹

Review Nanoscience & Nanotechnology

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

F. H. L. Koppens et al.

NATURE NANOTECHNOLOGY (2014)

添加到收藏夹

Article Physics, Applied

Band offsets and heterostructures of two-dimensional semiconductors

Jun Kang et al.

APPLIED PHYSICS LETTERS (2013)

添加到收藏夹

Article Nanoscience & Nanotechnology

Ultrasensitive photodetectors based on monolayer MoS2

Oriol Lopez-Sanchez et al.

NATURE NANOTECHNOLOGY (2013)

添加到收藏夹

Article Chemistry, Multidisciplinary

Single-Layer MoS2 Phototransistors

Zongyou Yin et al.

ACS NANO (2012)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

Woong Choi et al.

ADVANCED MATERIALS (2012)

添加到收藏夹

Review Nanoscience & Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Qing Hua Wang et al.

NATURE NANOTECHNOLOGY (2012)

添加到收藏夹

Article Chemistry, Multidisciplinary

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

Changgu Lee et al.

ACS NANO (2010)

添加到收藏夹

Article Chemistry, Physical

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

Stefan Grimme et al.

JOURNAL OF CHEMICAL PHYSICS (2010)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.