Charge Transport Manipulation via Interface Doping: Achieving Ultrasensitive Organic Semiconductor Gas Sensors

Organic semiconductor (OSC) gas sensors are receiving tremendous attention with the rise of wearable devices. Due to the complicated charge transport characteristics of OSCs, it is usually difficult to optimize their gas sensitivity by directly tailoring the original signals, as in many other kinds of sensors. Instead, device engineering strategies are frequently centered on enhancing the gas-film interaction. Herein, by introducing interface doping between self-assembled monolayers and triisopropylsilylethynyl-substituted pentacene films, we report a wide tuning of OSC gas sensitivity via charge transport manipulation and achieve an ultrahigh sensitivity of nearly 2000%/ppm to NO2, simultaneously resulting in a fast square-wave-like response feature. In addition, this sensor demonstrates good humidity stability and operates well in flexible devices. More importantly, we identify that charge transport manipulation tailors the gas sensibility of OSCs by means of electronic structure instead of original signal values: compared to shallow traps, the presence of proper deep traps is conducive to gaining high sensitivity and ultrafast response/recovery speeds. This approach is also effective for tuning the sensitivity to reductive gases, verifying its generality for promoting the performance of OSC gas sensors, as well as a promising strategy for other types of sensors or detectors.

Automated summary

We report a method of widely tuning the gas sensitivity of organic semiconductor (OSC) gas sensors through charge transport manipulation, achieving an ultrahigh sensitivity to NO2 of nearly 2000%/ppm and a fast square-wave-like response feature. This approach is also effective for tuning the sensitivity to reductive gases, demonstrating its generality for promoting the performance of OSC gas sensors, as well as a promising strategy for other types of sensors or detectors.