Half-Metallic Heusler Alloy/MoS2 Based Magnetic Tunnel Junction

Integration of half-metallic materials and 2D spacers into vertical magnetoresistive spin valves may pave the way for effective low-power consumption storage and memory technologies. Driven by the recent successful growth of graphene/ half-metallic Co2Fe(Ge1/2Ga1/2) (CFGG) heterostructure, here we report a theoretical investigation of magnetic tunnel junction (MTJ) based on the ferromagnetic CFGG Heusler alloy and the MoS2 spacer of different thicknesses. Using ab initio approach, we demonstrate that the inherent ferromagnetism of CFGG is preserved at the interface, while its half-metallicity is recovering within few atomic layers. Ballistic transport in CFGG/ MoS2/CFGG MTJ is studied within the nonequilibrium Green's function formalism, and a large magnetoresistance value up to similar to 105% is observed. These findings support the idea of effective spintronics devices based on half-metallic Heusler alloys and highly diversified transition metal dichalcogenide family.

Automated summary

Integrating half-metallic materials and 2D spacers into vertical magnetoresistive spin valves may lead to effective low-power consumption storage and memory technologies. The study investigated magnetic tunnel junctions based on ferromagnetic CFGG Heusler alloy and MoS2 spacers of different thicknesses, demonstrating a large magnetoresistance value. The findings support the development of spintronics devices utilizing half-metallic Heusler alloys and diverse transition metal dichalcogenide family.