High Thermoelectric Performance in AgBiSe2-Incorporated n-Type Bi2Te2.69Se0.33Cl0.03

Bismuth telluride-based (Bi2Te3) alloys have long been considered the best thermoelectric (TE) materials at room temperature. However, the n-type Bi2Te3 alloys always exhibit poor thermoelectric performance than their p-type counterpart, which severely limits the energy conversion efficiency of thermoelectric devices. Here, we demonstrate that incorporating AgBiSe2 can concurrently regulate the electrical and thermal transport properties as well as improve the mechanical performance of n-type Bi2Te2.69Se0.33Cl0.03 for high thermoelectric performance. Among these, AgBiSe2 effectively enhanced the Seebeck coefficients of n-type Bi2Te2.69Se0.33Cl0.03 due to the reduced carrier concentration and reduced the thermal conductivity of n-type Bi2Te2.69Se0.33Cl0.03 owing to the enhanced phonon scattering by AgBiSe2 as well as its low thermal conductivity nature. Consequently, the simultaneous optimization of electrical and thermal transport properties enables us to achieve a maximum ZT of similar to 1.21 (at similar to 353 K) and an average ZTave of similar to 1.07 (300-433 K) for 3.5 wt % AgBiSe2-incorporated Bi2Te2.69Se0.33Cl0.03, which are similar to 25.62 and similar to 23.36% larger than those of Bi2Te2.69Se0.33Cl0.03, respectively. This work proves that the incorporation of AgBiSe2 is an efficient way to improve the thermoelectric performance of bismuth telluride-based materials.

Automated summary

This research demonstrates that incorporating AgBiSe2 into n-type Bi2Te2.69Se0.33Cl0.03 can effectively regulate the electrical and thermal transport properties, leading to improved thermoelectric performance.