期刊
ACS APPLIED MATERIALS & INTERFACES
卷 14, 期 50, 页码 56310-56320出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c16593
关键词
thin film transistor; self-assembled monolayer; indium-gallium-zinc oxide; copper diffusion barrier; contact resistance
资金
- Samsung Display
- R&D program of MOTIE/KEIT [20012460]
- Priority Research Centers Program through the National Research Foundation of Korea [NRF-2019R1A6A1A11055660]
- Korea Medical Device Develop-ment Fund grant - Korea government (theMinistry of Science and ICT) [KMDF_PR_20200901 _0093, 9991006766]
- ICONS (Institute of Convergence Science) , Yonsei University
- Korea Initiative for fostering University of Research and Innovation (KIURI) Program of the National Research Foundation (NRF) - Korean government (MSIT) [NRF-2020M3H1A1077207]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2022R1I1A1A01068817]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20012460] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This study demonstrates that tailoring the self-assembled monolayer (SAM) using the chemical coupling method enhances the electrical and mechanical properties of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs).
Controlling the contact properties of a copper (Cu) electrode is an important process for improving the performance of an amorphous indium- gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) for high-speed applications, owing to the low resistance-capacitance product constant of Cu. One of the many challenges in Cu application to a-IGZO is inhibiting high diffusivity, which causes degradation in the performance of a-IGZO TFT by forming electron trap states. A self-assembled monolayer (SAM) can perfectly act as a Cu diffusion barrier (DB) and passivation layer that prevents moisture and oxygen, which can deteriorate the TFT on-off performance. However, traditional SAM materials have high contact resistance and low mechanical-adhesion properties. In this study, we demonstrate that tailoring the SAM using the chemical coupling method can enhance the electrical and mechanical properties of a-IGZO TFTs. The doping effects from the dipole moment of the tailored SAMs enhance the electrical properties of a-IGZO TFTs, resulting in a field-effect mobility of 13.87 cm2/V center dot s, an on-off ratio above 107, and a low contact resistance of 612 omega. Because of the high electrical performance of tailored SAMs, they function as a Cu DB and a passivation layer. Moreover, a selectively tailored functional group can improve the adhesion properties between Cu and a-IGZO. These multifunctionally tailored SAMs can be a promising candidate for a very thin Cu DB in future electronic technology.
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