Modeling of a Sn-Based HTM-Free Perovskite Solar Cell Using a One-Dimensional Solar Cell Capacitance Simulator Tool

Tin (Sn)-based perovskite solar cells (PSCs) have received increasing attention in the domain of photovoltaics due to their environmentally friendly nature. In this paper, numerical modeling and simulation of hole transport material (HTM)-free PSC based on methyl ammonium tin triiodide (CH3NH3SnI3) was performed using a one-dimensional solar cell capacitance simulator (SCAPS-1D) software. The effect of perovskite thickness, interface defect density, temperature, and electron transport material (ETM) on the photovoltaic performance of the device was explored. Prior to optimization, the device demonstrated a power conversion efficiency (PCE) of 8.35%, fill factor (FF) of 51.93%, short-circuit current density (J(sc)) of 26.36 mA/cm(2), and open circuit voltage (V-oc) of 0.610 V. Changing the above parameters individually while keeping others constant, the obtained optimal absorber thickness was 1.0 mu m, the interface defect density was 10(10) cm(-2), the temperature was 290 K, and the TiO2 thickness was 0.01 mu m. On simulating with the optimized data, the final device gave a PCE of 11.03%, FF of 50.78%, J(sc) of 29.93 mA/cm(2), and V-oc of 0.726 V. Comparing the optimized and unoptimized metric parameters, an improvement of similar to 32.10% in PCE, similar to 13.41% in J(sc), and similar to 19.02% in V-oc were obtained. Therefore, the results of this study are encouraging and can pave the path for developing highly efficient PSCs that are cost-effective, eco-friendly, and comparable to state-of-the-art.

Automated summary

This study performed numerical modeling and simulation of hole transport material (HTM)-free perovskite solar cells (PSCs) based on methyl ammonium tin triiodide. The effect of different parameters on the photovoltaic performance of the device was explored and optimized. The optimized device showed significant improvements in power conversion efficiency, short-circuit current density, and open circuit voltage compared to the unoptimized device.