Enhancement of Photoluminescence in BaSi2O2N2:Eu2+ by Partial Ge4+ Substitution for Si4+

Ge4+-doped BaSi2O2N2:Eu2+ phosphors were prepared by a high temperature solid-state reaction method. The phase structure, photoluminescence (PL) properties and PL thermal stability of the as-synthesized samples were investigated. The emission intensity of the Ba(Si0.99Ge0.01)(2)O2N2: 0.05Eu(2+) phosphor was 41.7% greater than that of BaSi2O2N2:0.05Eu(2+). When the temperature increased to 150 degrees C, the emission intensity of Ba(Si0.99Ge0.01)(2)O2N2:0.05Eu(2+) phosphor was 67.0% of the initial value at room temperature. This value was 22.9% greater than that of BaSi2O2N2:0.05Eu(2+). The related mechanism has also been explained through the crystal field theory. All these results indicated that the Ge4+-doped BaSi2O2N2:0.05Eu(2+) phosphor is a promising material for application in white light emitting diodes.