期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 16, 期 2, 页码 1680-1684出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2016.11965
关键词
Carbon Nanowalls; Boron; MPECVD; Field Emission
类别
资金
- Technology Innovation Program of the Korea Government Ministry of Trade, Industry and Energy
In this research, catalyst-free vertically aligned boron doped carbon nanowalls films were fabricated on silicon (100) substrates by MPECVD using feeding gases CH4, H-2 and B2H6 (diluted with H-2 to 5% vol) as precursors. The substrates were pre-seeded with nanodiamond colloid. The fabricated CNWs films were characterized by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The data obtained from SEM confirms that the CNWs films have different density and wall thickness. From Raman spectrum, a G peak around 1588 cm(-1) and a D band peak at 1362 cm(-1) were observed, which indicates a successful fabrication of CNWs films. The EDX spectrum of boron doped CNWs film shows the existence of boron and carbon. Furthermore, field emission properties of boron doped carbon nanowalls films were measured and field enhancement factor was calculated using Fowler-Nordheim plot. The result indicates that boron doped CNWs films could be potential electron emitting materials.
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