期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 16, 期 11, 页码 11608-11612出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2016.13560
关键词
Oxide Semiconductor; Heterojunction; Gas Sensor; Zinc Oxide; Copper Oxide
类别
资金
- National Research Laboratory Program
- National Research Foundation of Korea [NRF-2013R1A1A4A01007571]
- National Research Foundation of Korea [2015R1A2A1A01006192] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This paper reports the room temperature sensing of NO gas by a novel oxide semiconductor p-n heterojunction structure composed of p-type CuO nanoparticles and n-type ZnO nanorods, which were fabricated using solution-based synthesis methods. The transport behavior and NO gas sensing properties of the hybrid CuO nanoparticles/ZnO nanorods heterostructure were characterized. The oxide heterojunction structure exhibited definite rectifying diode-like behavior at room temperature. When the oxide p-n heterojunction structure was exposed to the acceptor gas NO in dry air, an abrupt decrease in the forward diode current of the p-n junction was observed. The NO gas sensing response of the CuO nanoparticles/ZnO nanorods heterostructure at 2 V was as high as 265% for a NO concentration of 10 ppm even at room temperature and increased linearly with increasing NO gas concentration in the range of 3-10 ppm. The experimental results indicated that this type of oxide heterostructure can be used effectively in a range of gas-sensing applications because of its simple solution-based processing and room temperature performance.
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