期刊
JOURNAL OF MOLECULAR STRUCTURE
卷 1118, 期 -, 页码 275-278出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.molstruc.2016.04.028
关键词
Carbon materials; Chemical vapor deposition; Spectroscopy; Atomic force microscopy; Raman; Ellipsometry
资金
- Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah [D-003/436]
- DSR
Two reliable approaches for estimating the number of atomic planes of graphene films grown on Si substrate were demonstrated by Raman and ellipsometry spectroscopies. The first approach depends on the measurement of the ratio of the integrated Raman scattering intensity of the graphene G band to the optical phonon band of Si substrate (I-G/I-Si). The second approach belongs to ellipsometry measurement of the ratio of the amplitude of the reflected polarized light from the surface of the graphene films to the amplitude of reflected polarized light from the surface of the Si substrate (psi(G)/psi(Si)) These two approaches could efficiently recognize the number of atomic planes in the graphene films (1 <= n <= 10). The results were compared with atomic force microscopy (AFM) measurement and showed a linear regression with slope of 0.36 +/- 0.01 nm/graphene layer. The Two approaches will open a new avenue to efficiently count the number of graphene layers during the preparation process. (C) 2016 Elsevier B.V. All rights reserved.
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