4.6 Review

2D tribotronic transistors

期刊

JOURNAL OF PHYSICS-ENERGY
卷 5, 期 1, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.1088/2515-7655/ac9f6c

关键词

2D materials; tribotronics; field effect transistor; triboelectric nanogenerator; triboelectric potential

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This review summarizes the recent developments of 2D tribotronic transistors, introducing the properties of 2D materials and discussing micro/nanoscale and macroscale tribotronic tuning methods and applications. The challenges and prospects of this field are also discussed.
Since the discovery of graphene, two-dimensional (2D) materials have been widely applied to field-effect transistors due to their great potential in optoelectronics, photodetectors, intelligent sensors, and neuromorphic devices. By integrating a 2D transistor with a triboelectric nanogenerator (TENG) into a tribotronic transistor, the induced triboelectric potential can readily regulate the charge carrier transport characteristics in the semiconductor channel. The emerging research field of tribotronics (mainly tribotronic transistors) has attracted extensive attention due to their significant applications in various sensation and human-machine interactions. Here, this review summarizes the recent developments of 2D tribotronic transistors. Firstly, the electrical, optoelectronic, and piezoelectric properties of typical 2D materials are introduced. Then, tribotronic tuning at the micro/nanoscale is discussed together with the methodologies of thermionic emission, triboelectricity tunneling, and atomic force microscope probe scanning, which is of great significance for the investigation of the underlying mechanism of the tribotronic effect. In addition, macroscale tribotronic regulation via TENG mechanical displacement is discussed in detail to explore the applications of 2D tribotronic transistors in intelligent sensors, logic devices, memory devices, and artificial synapses. Finally, the challenges and perspectives for 2D tribotronic transistors are discussed.

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