期刊
PHOTONICS
卷 9, 期 8, 页码 -出版社
MDPI
DOI: 10.3390/photonics9080579
关键词
optical power converters; laser power converters; power-over-fiber; power beaming; photovoltaic; galvanic isolation; GaAs; multijunctions semiconductor heterostructures; cryogenic temperatures; bandgap offset (W-oc)
类别
High-efficiency multijunction laser power converters designed with 5 thin subcells have demonstrated unprecedented conversion efficiencies reaching up to 74.7% at temperatures around 150 K. At 77 K, the converter maintains an efficiency of 65% and can generate up to 0.3 watts of output power.
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic power converting III-V semiconductor devices are designed with GaAs absorbing layers, here with 5 thin subcells (PT5), connected by transparent tunnel junctions. Unprecedented conversion efficiencies of up to 74.7% are measured at temperatures around 150 K. At temperatures around 77 K, a remarkably low bandgap offset value of W-OC = 71 mV is obtained at an optical input intensity of similar to 7 W/cm(2). At 77 K, the PT5 retains an efficiency of 65% with up to 0.3 W of converted output power.
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