InAs-Based Quantum Cascade Lasers with Extremely Low Threshold

We report InAs-based quantum cascade lasers (QCLs) operating near 14 mu m with a threshold current density J(th) as low as 0.6 kA/cm(2) at room temperature. The threshold obtained is lower than the J(th) of the best reported InP-based QCLs to date without facet treatment. The achieved performance improvement is partially due to an increased separation between the upper transition level and the next one in the active quantum wells of the employed QCL design.

Automated summary

In this study, InAs-based quantum cascade lasers (QCLs) operating near 14 μm were reported to have a threshold current density J(th) as low as 0.6 kA/cm(2) at room temperature. The achieved threshold was lower than that of the best reported InP-based QCLs without facet treatment, partially due to an increased separation between the upper transition level and the next one in the active quantum wells of the QCL design employed.