Nano-Bismuth-Sulfide for Advanced Optoelectronics

Bi2S3 is a semiconductor with rational band gap around near-IR and visible range, and its nanostructures (or nano-Bi2S3) have attracted great attention due to its promising performances in optoelectronic materials and devices. An increasing number of reports point to the potential of such nanostructures to support a number of optical applications, such as photodetectors, solar cells and photocatalysts. With the aim of providing a comprehensive basis for exploiting the full potential of Bi2S3 nanostructures on optoelectronics, we review the current progress in their controlled fabrication, the trends reported (from theoretical calculations and experimental observations) in their electrical properties and optical response, and their emerging applications.

Automated summary

This article reviews the current progress in controlled fabrication, electrical properties, optical response, and emerging applications of Bi2S3 nanostructures in optoelectronics.