Silicene nanosheets intercalated in slightly defective epitaxial graphene on a 4H-SiC(0001) substrate

In the last years, epitaxial graphene (epi-Gr) demonstrated to be an excellent substrate for the synthesis of epitaxial or intercalated two dimensional (2D) materials. Among 2D materials, silicene has been for a long time a dream for the scientific community, for its importance both from the fundamental and the application point of view. Despite the theoretical prediction of silicene energetic viability, experimentally the substrate proved to play a fundamental role in the Si atom adsorption process leading, in case of metal substrates, to a mixed phase formation and, for van der Waals chemical inert substrates, to Si atom intercalation even at room temperature. Such an intercalation has been associated to the presence of surface defects. Very recently it has been shown that hundreds of nanometer area quasi-free standing silicene can be grown on top of an almost ideal epi-Gr layer synthesized on 6H-SiC substrate. In the present paper, using scanning tunneling microscopy and Raman analysis, we demonstrate that a non-ideal (slightly defective) epi-Gr network obtained by thermal decomposition of Si-terminated 4H-SiC(0001) enables the Si atom penetration forming intercalated silicene nanosheets at room temperature, thus opening a path towards controlled intercalation of silicon atoms through epi-Gr and formation of silicene nanosheets for future applications in nanotechnology.

Automated summary

Epitaxial graphene has been proven to be an excellent substrate for synthesizing two-dimensional materials. Silicene, a highly anticipated material, has been successfully grown on a slightly defective epitaxial graphene network, opening possibilities for controlled intercalation of silicon atoms and future nanotechnology applications.