4.7 Article

Atomic Layer Grown Zinc-Tin Oxide as an Alternative Buffer Layer for Cu2ZnSnS4-Based Thin Film Solar Cells: Influence of Absorber Surface Treatment on Buffer Layer Growth

期刊

ACS APPLIED ENERGY MATERIALS
卷 5, 期 11, 页码 13971-13980

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaem.2c02579

关键词

kesterite CZTS; ALD ZTO; interface characterization; N2 annealing; XPS; HAXPES; XAS

资金

  1. Swedish Energy Agency [2017-004796, P50626-1]
  2. Swedish Research Council [2020-04065, 2018-06465]
  3. StandUp for Energy programme
  4. project CALIPSOplus from the EU Framework Programme for Research and Innovation HORIZON 2020 [730872]
  5. Swedish Research Council [2020-04065, 2018-06465] Funding Source: Swedish Research Council

向作者/读者索取更多资源

This research investigates the chemical and electronic properties at the ZTO/CZTS interface and the reactions that may occur at the CZTS absorber surface prior to atomic layer deposition of the buffer layer. The study suggests that the N2 annealing step integrated in the buffer layer growth may be useful for device performance.
Zn1-xSnxOy (ZTO) deposited by atomic layer deposition has shown promising results as a buffer layer material for kesterite Cu2ZnSnS4 (CZTS) thin film solar cells. Increased performance was observed when a ZTO buffer layer was used as compared to the traditional CdS buffer, and the performance was further increased after an air annealing treatment of the absorber. In this work, we study how CZTS absorber surface treatments may influence the chemical and electronic properties at the ZTO/CZTS interface and the reactions that may occur at the absorber surface prior to atomic layer deposition of the buffer layer. For this, we have used a combination of microscopy and synchrotron-based spectroscopies with variable information depths (X-ray photoelectron spectroscopy, high-energy X-ray photoelectron spectroscopy, and X-ray absorption spectroscopy), allowing for an in-depth analysis of the CZTS near-surface regions and bulk material properties. No significant ZTO buffer thickness variation is observed for the differently treated CZTS absorbers, and no differences are observed when comparing the bulk properties of the samples. However, the formation of SnOx and compositional changes observed toward the CZTS surface upon an air annealing treatment may be linked to the modified buffer layer growth. Further, the results indicate that the initial N2 annealing step integrated in the buffer layer growth by atomic layer deposition, which removes Na-COx species from the CZTS surface, may be useful for the ZTO/CZTS device performance.

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