期刊
NPJ 2D MATERIALS AND APPLICATIONS
卷 6, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41699-022-00337-1
关键词
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资金
- National Research Foundation of Korea (NRF) - Korean Government (MSIT) [2020R1C1C1009381, 2021K2A9A2A06044132, 2020R1A4A2002806]
- Korea Basic Science Institute (KBSI) National Research Facilities and Equipment Center - Korean Government (Ministry of Education) [2019R1A6C1010031]
- Ministry of Education Youth and Sports (MEYS) [LTAUSA19034]
- European Union [956813]
- National Research Foundation of Korea [2021K2A9A2A06044132] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Inkjet printing is a cost-effective and scalable method for assembling colloidal materials into desired patterns. 2D nanosheets are a promising material category for printed electronics, enabling high-performance thin-film transistors.
Inkjet printing is a cost-effective and scalable way to assemble colloidal materials into desired patterns in a vacuum- and lithography-free manner. Two-dimensional (2D) nanosheets are a promising material category for printed electronics because of their compatibility with solution processing for stable ink formulations as well as a wide range of electronic types from metal, semiconductor to insulator. Furthermore, their dangling bond-free surface enables atomically thin, electronically-active thin films with van der Waals contacts which significantly reduce the junction resistance. Here, we demonstrate all inkjet-printed thin-film transistors consisting of electrochemically exfoliated graphene, MoS2, and HfO2 as metallic electrodes, a semiconducting channel, and a high-k dielectric layer, respectively. In particular, the HfO2 dielectric layer is prepared via two-step; electrochemical exfoliation of semiconducting HfS2 followed by a thermal oxidation process to overcome the incompatibility of electrochemical exfoliation with insulating crystals. Consequently, all inkjet-printed 2D nanosheets with various electronic types enable high-performance, thin-film transistors which demonstrate field-effect mobilities and current on/off ratios of similar to 10 cm(2) V-1 s(-1) and > 10(5), respectively, at low operating voltage.
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